Acta Optica Sinica, Volume. 45, Issue 15, 1523003(2025)

Performance Optimization and Simulation of D-A-π-A-Based Solid-State Dye-Sensitized Solar Cells

Zhongbao Zhang1,2 and Youliang Cheng1,2、*
Author Affiliations
  • 1Department of Power Engineering, North China Electric Power University, Baoding 071003, Hebei , China
  • 2Hebei Key Laboratory of Low Carbon and High Efficiency Power Generation Technology, North China Electric Power University, Baoding 071003, Hebei , China
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    Figures & Tables(10)
    Solid state DSSC device. (a) Structure diagram; (b) energy level alignment diagram
    Comparison between simulation results and experimental data
    Influence of defect density and thickness of dye layer on DSSC electrical performance. (a) Voc; (b) Jsc; (c) PCE; (d) FF
    Influence of defect density of dye layer on DSSC photoelectric performance. (a) J-V; (b) carrier recombination rate
    Influence of ETL and HTL doping concentrations on DSSC electrical performance. (a) Voc; (b) Jsc; (c) PCE; (d) FF
    Influence of ETL and HTL doping concentrations on DSSC band structure. (a) ETL; (b) HTL
    Influence of temperature on DSSC performance. (a) J-V; (b) Voc, Jsc; (c) QE; (d) FF, PCE
    Influence of back contact metal on DSSC performance. (a) J-V; (b) PCE
    • Table 1. Material parameters of each layer of DSSC

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      Table 1. Material parameters of each layer of DSSC

      ParameterFTO30-33TiO234-37AQ3102638Spiro-OMeTAD39-41
      Thickness /nm502200200100
      Band gap /eV3.503.201.922.88
      Affinity /eV4.004.203.802.05
      Permittivity99103
      Effective conduction band density /cm-32.2×10181.0×10216.2×10212.8×1019
      Effective valence band density /cm-31.8×10191.0×10195.0×10201.0×1019
      Electron mobility /(cm-2·V-1·s-110020302.0×10-4
      Hole mobility /(cm-2·V-1·s-11010102.0×10-4
      Donor doping concentration /cm-31.0×10191.0×101800
      Acceptor doping concentration /cm-3001.0×10171.0×1018
      Defect density /cm-31.0×10151.0×10151.0×10161.0×1015
    • Table 2. Interface defect parameters

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      Table 2. Interface defect parameters

      ParameterTiO2/AQ310AQ310/Spiro-OMeTAD
      Defect typeNeutralNeutral
      Capture cross section electrons /cm21.0×10-181.0×10-18
      Capture cross section holes /cm21.0×10-181.0×10-18
      Energetic distributionSingleSingle
      Reference for defect energy level EtAbove the highest EvAbove the highest Ev
      Energy with respect to reference /eV0.60.6
      Total defect /cm-21.0×10101.0×1010
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    Zhongbao Zhang, Youliang Cheng. Performance Optimization and Simulation of D-A-π-A-Based Solid-State Dye-Sensitized Solar Cells[J]. Acta Optica Sinica, 2025, 45(15): 1523003

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    Paper Information

    Category: Optical Devices

    Received: Mar. 18, 2025

    Accepted: May. 12, 2025

    Published Online: Aug. 15, 2025

    The Author Email: Youliang Cheng (ylcheng@ncepu.edu.cn)

    DOI:10.3788/AOS250762

    CSTR:32393.14.AOS250762

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