Optics and Precision Engineering, Volume. 21, Issue 6, 1472(2013)
Effect of strain on formation of antibonding hole ground states in InAs quantum dots
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TANG Nai-yun. Effect of strain on formation of antibonding hole ground states in InAs quantum dots[J]. Optics and Precision Engineering, 2013, 21(6): 1472
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Received: Jan. 31, 2013
Accepted: --
Published Online: Jul. 1, 2013
The Author Email: TANG Nai-yun (naiyun@mail.sitp.ac.cn)
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