Microelectronics, Volume. 52, Issue 3, 442(2022)

Process Verification of SiC-MOS Interface Optimization and Simulation-Fitting of MOSFET Electrical Characteristics

ZHU Tao1,2, JIAO Qianqian1,2, and LI Ling1,2
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    ZHU Tao, JIAO Qianqian, LI Ling. Process Verification of SiC-MOS Interface Optimization and Simulation-Fitting of MOSFET Electrical Characteristics[J]. Microelectronics, 2022, 52(3): 442

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    Paper Information

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    Received: Dec. 22, 2021

    Accepted: --

    Published Online: Jan. 18, 2023

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.210498

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