Journal of Semiconductors, Volume. 43, Issue 2, 021701(2022)

Recent development in electronic structure tuning of graphitic carbon nitride for highly efficient photocatalysis

Chao Li1,2,3, Jie Li4, Yanbin Huang5, Jun Liu1,2,3, Mengmeng Ma1,2,3, Kong Liu1,2,3, Chao Zhao1,2,3, Zhijie Wang1,2,3, Shengchun Qu1,2,3, Lei Zhang5, Haiyan Han5, Wenshuang Deng5, and Zhanguo Wang1,2,3
Author Affiliations
  • 1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
  • 3Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 4College of Mechanical and Electrical Engineering, Handan University, Handan 056005, China
  • 5School of Mathematical Science and Engineering, Hebei University of Engineering, Handan 056038, China
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    Figures & Tables(9)
    (Color online) The schematic structure of triazine (a) and tri-s-triazine (heptazine) (b) in g-C3N4. Reprinted from Ref. [10].
    (Color online) The process of overall solar water splitting over a semiconductor photocatalyst.
    (Color online) (a) The UV–vis absorption spectra, (b) converted Kubelka–Munk vs. light energy plots and (c) XPS valence band spectra of CN and CNQs. (d) The schematic band structures of CN and CNQ 680. Reprinted from Ref. [22].
    (Color online) Schematic illustration of synthesis methods of DTLP-CN via thermal polymerization of melamine, urea, and KOH. Reprinted from Ref. [25].
    (Color online) (a) Schematic structure of the O-doped g-C3N4-based photocatalyst. (b) Band structure diagrams of g-C3N4 and O-doped g-C3N4. (c) Schematic of the fabrication of BDCNN originated from CNN and (d) the charge-transfer process in BDCNN-based heterojunction upon light irradiation. Reprinted from Refs. [36, 40].
    (Color online) (a) UV–vis diffuse reflectance spectra, (b) the band gap from (αhv)1/2 vs. photon energy, (c) valance band XPS spectra, and (d) schematic illustration of the band gap structure of pristine and doped g-C3N4 samples. Reprinted from Ref. [45].
    (Color online) (a) UV–visible diffuse reflectance spectrum (DRS) and (b) HOMO and LUMO positions of CN, CN-LiNa, CN-NaK, and CN-LiK. (c) UV–vis DRS and (b) bandgap structures for CN, crystalline CN, CCN and crystalline CCN. Reprinted from Refs. [52, 54].
    (Color online) Schematic illustrations of basic structural units of polymeric carbon nitride with different C and N stoichiometric ratios: (a) triazine-based graphitic carbon nitride, (b) heptazine-based graphitic carbon nitride, (c, d) polymeric C3N5, (e) C3N6, (f) C3N7, and (g) C3N3. Reprinted from Ref. [56].
    (Color online) (a) Synthesis scheme of C3N5. (b) UV–Vis DRS for C3N5 compared with bulk g-C3N4. (c) Steady-state PL spectra of melem, g-C3N4 and C3N5. Reprinted from Ref. [61].
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    Chao Li, Jie Li, Yanbin Huang, Jun Liu, Mengmeng Ma, Kong Liu, Chao Zhao, Zhijie Wang, Shengchun Qu, Lei Zhang, Haiyan Han, Wenshuang Deng, Zhanguo Wang. Recent development in electronic structure tuning of graphitic carbon nitride for highly efficient photocatalysis[J]. Journal of Semiconductors, 2022, 43(2): 021701

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    Paper Information

    Category: Reviews

    Received: Aug. 27, 2021

    Accepted: --

    Published Online: Feb. 16, 2022

    The Author Email:

    DOI:10.1088/1674-4926/43/2/021701

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