Chinese Journal of Lasers, Volume. 51, Issue 11, 1101026(2024)
Review of Low-Dimensional Semiconductor Micro- and Nano-Lasers
Fig. 1. WGM lasing of chalcogenide materials with different resonant cavity structures. (a)(b) Schematic WGM modes and excitation spectra of MAPbIxCl3-x chalcogenide nanosheets[30]; (c) lasing characteristics of MAPbBr3 microcubes synthesized by solution method[31]; (d)(e) lasing characteristics of single-crystalline CsPbX3 nanosheets synthesized by gas-phase method[32]; (f) lasing of CsPbBr3 microcubes cavities synthesized by gas-phase method[33]; (g)(h) lasing of gas-phase synthesized RbPbBr3 microcube excitation properties and polarization spectra[34]; (i) high-temperature upconversion CsPbBr3 microcube lasing[35]
Fig. 2. Resonant cavity lasing and laser display of chalcogenide microspheres. (a)(b) Schematic WGM laser mode and excitation spectra of CsPbX3 microspheres synthesized by gas-phase method[36]; (c)(d) schematic two-photon-pumped CsPbBr3 microspheres and laser characteristics[37]; (e) laser characteristics of RbPbBr3 microspheres synthesized by gas-phase method[38]; (f) fs-processed CsPbX3 thin films used for laser display[40]; (g)(h) twin-sphere CsPbBr3 microsphere coupled excitation properties and polarization spectra[39]
Fig. 3. Chalcogenide nanowire FP mode wavelength tunable lasing. (a)‒(c) Tuning of halogen ions in MAPbX3 nanowires to achieve lasing out in the 500 nm to 770 nm band[43]; (d)(e) tuning of halogen ions at the X position in CsPbX3 micro-nanowires to achieve lasing in the 430 nm to 730 nm band[44]; (f)(g) achieving lasing out in a single CsPbCl3-3xBr3x nanowire from 480 nm to 525 nm continuously tunable nanowire lasing[45]
Fig. 4. WGM mode wavelength tunable laser for chalcogenide materials. (a) Adjusting the halogen ions in the CsPbX3 microsphere cavity to realize the visible to infrared wavelength laser emission[36]; (b) adjusting the ratio of Rb/Cs in the cavity indication of the RbxCs1-xPbBr3 microcubic block to realize the 470 nm to 535 nm wavelength laser[34]; (c) adjusting the ratio of Rb/Cs to realize the emission wavelength tuning for the RbxCs1-xPbBr3 microsphere cavity[38]; (d)(e) adjusting the edge length of CsPbBr3 microcubes to realize their emission wavelength tuning, and the emission wavelength is linearly related to the edge length[35]; (f)(g) diameter of CsPbBr3 and RbPbBr3 microspheres to tune their excitation wavelengths[36,38]
Fig. 5. Optical PUFs based on FP microcavities. (a) Asymmetric liquid rupture results in random capillary bridge size[52]; (b) size distributions of four emission modes conforming to the Gaussian distribution are established by extracting the laser emission and cavity length for nanolasers with random size[52]; (c) nanowire array is grown randomly oriented by a one-step recrystallization method, and when the pumped laser is focused on the nanowire, the encryption key is obtained based on its laser output[53]; (d) based on the number of laser modes of the nanowire array, the quaternary and binary keys are obtained respectively[53]
Fig. 6. Optical PUFs based on WGM microcavities. (a) Fluorescence micrograph of microform for microhemisphere array and corresponding emission spectrum[54]; (b) post-processing diagram of deformed microcavity array[55]; (c) randomly deformed microcavity array realizes different quaternary and binary encoding keys by varying power and obtains encryption keys with high encoding capacity by combining them[55]
Fig. 7.
Ultrafast encoder based on micro-nano structure. (a) Ultrafast responses in parallel and vertical linear polarization directions[62]; (b) THz polarization code
Fig. 8. Single-mode lasing properties of CQDs. (a) Illustration of a single CsPb(Br0.5I0.5)3 CQDs/ZnO composite microcavity pumped by a 400 nm femto-second laser on a silicon substrate[83]; (b) excitation power-dependent lasing from composite microcavity[83]; (c) true-color photographs of QD ring laser at different excitation power[82]; (d) four representative spectra in a ring laser[82]; (e) power-dependent emission spectra of a typical CQDAM at 450 K[86]; (f) photoluminescence (PL) intensities at the cavity resonance energy and the nonresonant energy varies with excitation density[86]
Fig. 9. Laser performance of self-assembled superlattice microcavities. (a) Resonance optical modes of QDSM with different sizes[89]; (b) power dependence of PL intensity in cavity mode[89]; (c) pumping-density-dependent PL spectra from an individual QD superlattice microcavity at 10 K[91]; (d) power-dependent emission spectra from the CsPbBr3 QDs superlattice[90]; (e) PL intensity and spectral FWHM in CsPbBr2Cl QD superlattices as a function of pumping density[92]; (f) multi-wavelength tunable lasing of typical sites on alloy superlattice[93]
Fig. 11. Ultrafast optical properties of cavity-enhanced superfluorescence. (a) Schematic diagram of cooperative (thermal) dipole systems in CESF and conventional laser optical cavities[89]; (b) time-dynamical fluorescence spectra of different structures[89]; (c) stripe camera images and fitted TRPL decay curves at pumping densities of 0.7 Pth, 1.1 Pth, and 2.3 Pth[91]
Fig. 12. Quantum dot superlattices promote exciton delocalization and act as terahertz quantum switches. (a) Molecular dynamics simulation of nanocrystal binding in toluene and hexane[109]; (b) schematic of theoretical simulations of anion exchange processes in the superlattice[92]; (c) effect of ligands on the self-assembly interactions of quantum dots[90]; (d) schematic diagram of CsPbBr2Cl superlattices mitigating photoinduced phase segregation by attenuating exciton-phonon coupling compared to uncoupled quantum dots[93]; (e) performance of THz quantum conversion devices based on superlattice microcavities[89]
Fig. 13. Superfluorescence kinetics and room-temperature superfluorescence mechanism of cooperating excitons under controlled perturbation. (a) Time-resolved photoluminescence spectra of a perturbation introduced at different moments at 10 K[116]; (b) explanation of the physical mechanism of echo-like radiation[117]; (c) schematic diagram of a classical vibration isolation system[118]
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Hongxing Dong, Hao Chang, Xinyu Gao, Liang Liu, Haodong Cheng, Xinjie Li, Ke Yu. Review of Low-Dimensional Semiconductor Micro- and Nano-Lasers[J]. Chinese Journal of Lasers, 2024, 51(11): 1101026
Category: laser devices and laser physics
Received: Dec. 29, 2023
Accepted: Feb. 20, 2024
Published Online: Jun. 11, 2024
The Author Email: Dong Hongxing (hongxingd@siom.ac.cn), Chang Hao (changhao@siom.ac.cn)
CSTR:32183.14.CJL231601