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Chinese Optics Letters, Volume. 20, Issue 3, 031402(2022)

Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited]

Lei Han1,2,3, Yuanbin Gao1,2,3, Sheng Hang1,2,3, Chunshuang Chu1,2,3、*, Yonghui Zhang1,2,3, Quan Zheng4, Qing Li4, and Zi-Hui Zhang1,2,3、**
Author Affiliations
  • 1State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin 300401, China
  • 2Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China
  • 3Hebei Key Laboratory of Advanced Laser Technology and Equipment, Tianjin 300401, China
  • 4Key Engineering Center of Flat-Panel-Display Glass and Equipment, Shijiazhuang 050035, China
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    Article index updated: Sep. 27, 2025

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    The article is cited by 10 article(s) from Web of Science.
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    Lei Han, Yuanbin Gao, Sheng Hang, Chunshuang Chu, Yonghui Zhang, Quan Zheng, Qing Li, Zi-Hui Zhang, "Impact of p-AlGaN/GaN hole injection layer on GaN-based vertical cavity surface emitting laser diodes [Invited]," Chin. Opt. Lett. 20, 031402 (2022)

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    Paper Information

    Category: Lasers, Optical Amplifiers, and Laser Optics

    Received: Nov. 5, 2021

    Accepted: Dec. 2, 2021

    Published Online: Jan. 11, 2022

    The Author Email: Chunshuang Chu (chuchunshuang@hotmail.com), Zi-Hui Zhang (zh.zhang@hebut.edu.cn)

    DOI:10.3788/COL202220.031402

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology