Photonics Research, Volume. 9, Issue 9, 1811(2021)

Ultrafast carrier dynamics and nonlinear optical response of InAsP nanowires

Junting Liu1, He Yang2,4, Vladislav Khayrudinov3, Harri Lipsanen3, Hongkun Nie1、*, Kejian Yang1, Baitao Zhang1, and Jingliang He1
Author Affiliations
  • 1State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
  • 2Summa Semiconductor Oy, Micronova, Espoo FI-00076, Finland
  • 3Department of Electronics and Nanoengineering, Aalto University, Espoo FI-00076, Finland
  • 4e-mail: yhyanghe@gmail.com
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    Figures & Tables(8)
    (a) SEM image of InAsP NWs on quartz substrate. The inset is a higher-resolution SEM image, which shows the NW diameter of ∼50 nm. (b) AFM image of InAsP NWs. (c) Height profiles along the line in the AFM image. (d) EDX measurement of InAsP NWs along the growth direction. (e) Raman spectrum measured using a 532 nm laser. (f) Room-temperature PL spectrum of InAsP NWs.
    (a) Experimental setup of the nondegenerate pump-probe measurement. (b) Differential transmission of InAsP NWs at different pump pulse energies with a 675 nm probe laser. (c) Relationship between maximum differential transmission and initial photoinduced carrier density. (d) Linear fit to (n0/nt)2−1 as a function of pump-probe delay time and initial photoinduced carrier density.
    Characterization of the NLO properties of the InAsP NWs. OA Z-scan measurements of the InAsP NWs at (a) 532 nm and (c) 1064 nm. CA Z-scan measurements of the InAsP NWs at (b) 532 nm and (d) 1064 nm.
    Mode-locked laser results based on InAsP NWs. (a) Average output power versus absorbed pump power. (b) The measured pulse width by autocorrelation spectroscopy is ∼426 fs. Inset: corresponding spectrum centered at 1043 nm. (c) Recorded frequency spectrum of the mode-locked laser with an RBW of 10 kHz. Inset: 1 GHz wide-span spectrum. (d) Recorded CWML pulse trains under the maximum pump power.
    (a)–(c) Nonlinear transmittance of the InAsP NWs at the wavelength of 532 nm with different incident pulse energies. (d)–(f) Nonlinear transmittance of the InAsP NWs at the wavelength of 1064 nm with different incident pulse energies.
    Experimental setup of the mode-locked solid-state bulk laser based on an InAsP NWs SA.
    • Table 1. Fitted Parameters on the Carrier Relaxation Time of InAsP NWs from Eq. (1)

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      Table 1. Fitted Parameters on the Carrier Relaxation Time of InAsP NWs from Eq. (1)

      Pump Energy Intensity (μJ/cm2)τ1 (ps)τ2 (ps)A1A2
      47.71.89±0.9319.27±0.890.1920.803
      79.62.53±1.6511.17±0.670.1450.855
      127.32.26±0.6510.79±0.490.2280.772
      175.11.77±0.5910.12±0.550.2500.750
      197.42.65±1.207.95±0.780.2520.748
    • Table 2. Comparison of βeff and n2 Values between InAsP NWs and Other Nanomaterials

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      Table 2. Comparison of βeff and n2 Values between InAsP NWs and Other Nanomaterials

      MaterialsLaser Parametersβeff (cm/GW)n2 (m2/W)Reference
      Graphene1030 nm, 1 kHz, 340 fs(19.27±0.89)×10213.7×1016[38]
      MoS2532 nm, 10 kHz, 100 ps26.2±8.8(2.5±1.2)×1016[38]
      WS21064 nm, 20 Hz, 25 ps5.1±0.26(5.83±0.18)×1015[39]
      BP800 nm, 10 kHz, 100 fs1.38×102[40]
      MXene800 nm, 1 kHz, 95 fs−0.073.47×1020[41]
      InAs NWs1064 nm, 50 kHz, 100 ns1×108[42]
      InAsP NWs532 nm, 200 kHz, 10 ps(2.07±0.02)×105(2.39±0.03)×1013This work
      InAsP NWs1064 nm, 200 kHz, 10 ps(1.44±0.01)×105(2.73±0.02)×1013This work
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    Junting Liu, He Yang, Vladislav Khayrudinov, Harri Lipsanen, Hongkun Nie, Kejian Yang, Baitao Zhang, Jingliang He, "Ultrafast carrier dynamics and nonlinear optical response of InAsP nanowires," Photonics Res. 9, 1811 (2021)

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    Paper Information

    Category: Nonlinear Optics

    Received: Apr. 27, 2021

    Accepted: Jul. 6, 2021

    Published Online: Aug. 24, 2021

    The Author Email: Hongkun Nie (hknie@sdu.edu.cn)

    DOI:10.1364/PRJ.430172

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