Acta Optica Sinica, Volume. 22, Issue 10, 1275(2002)

The Si-Based Double Barrier Tunneling Light Emitting Junction

[in Chinese]*, [in Chinese], and [in Chinese]
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    References(6)

    [1] [1] Donohue J F, Wang E Y. Surface plasmon dispersion analysis in the metal-oxide-metal tunnel diode. J. Appl. Phys., 1987, 62(4):1313~1317

    [2] [2] Lamb J, McMarthy S L. Light emission from inelastic electron tunneling. Phys. Rev. Lett., 1976, 37(14):923~925

    [3] [3] Kirtley J, Thesis T N, Tsang J C. Light emission from tunnel junctions on gratings. Phys. Rew. (B), 1981, 24(10):5650~5663

    [4] [4] Soole J B D, Hughes H P. Roughness-coupled light emission from tunnel junction: The role of the fast surface plasmon. Surf. Science, 1988, 197(2):250~266

    [5] [5] Znamensky D A, Yusupov R G, Mislavsky B V. Langmuir-Blodgett mono- and mutilayers of fluorocarbon amphophilic polymers and application in photogalvanic metal-insulator-semiconductor structure. Thin Solid Films, 1992, 219(1~2):215~220

    [6] [6] Sun Chengxiu, Zhang Youwen, Gao Zhonglin. Some improvement on the light emission properties of MIM tunneling junction system. Chinese J. Electronics, 1996, 5(1):44~48

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    [in Chinese], [in Chinese], [in Chinese]. The Si-Based Double Barrier Tunneling Light Emitting Junction[J]. Acta Optica Sinica, 2002, 22(10): 1275

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    Paper Information

    Category: Materials

    Received: Jun. 29, 2001

    Accepted: --

    Published Online: Aug. 8, 2006

    The Author Email: (fjzeng@jlonline.com)

    DOI:

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