Infrared and Laser Engineering, Volume. 51, Issue 2, 20220022(2022)

Light beam induced current mapping to characterize damage characteristics of silicon solar cell irradiated by continuous-wave laser

Jian Lu, Zhijian Xie*, and Hongchao Zhang
Author Affiliations
  • School of Science, Nanjing University of Science and Technology, Nanjing 210094, China
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    References(15)

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    [4] Zhou G, Xu J, Lu J, et al. Irradiation effect of continuous-wave laser on triple-junction GaAs solar cells[J]. Laser & Optoelectronics Progress, 54, 111412(2017).

    [5] Li G, Zhang H, Wang C, et al. Effect of 1070 nm laser intensity on parameters of In0.3Ga0.7As solar cell[J]. Chinese Optics Letters, 17, 66-70(2019).

    [6] Tang D, Xu J, Li Y, et al. Damage effects of tri-junction GaAs solar cells irradiated by continuous-wave laser in vacuum[J]. Aerospace Shanghai (Chinese & English), 37, 54-60(2020).

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    [8] Chang H, Chen Y, Zhou W, et al. Damage characteristics of the solar cells irradiated by nanosecond pulsed lasers and the effects on photoelectric conversion[J]. Infrared and Laser Engineering, 50, 20210296(2021).

    [9] Schinke C, Peest P C, Schmidt J, et al. Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon[J]. AIP Advances, 5, 067168(2015).

    [10] [10] Jellison G E, Budai J D, Bent C J C, et al. Highresolution Xray light beam induced current (LBIC) measurements of multcrystalline silicon solar cells[C]35 th IEEE Photovoltaic Specialists Conference, 2010.

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    Jian Lu, Zhijian Xie, Hongchao Zhang. Light beam induced current mapping to characterize damage characteristics of silicon solar cell irradiated by continuous-wave laser[J]. Infrared and Laser Engineering, 2022, 51(2): 20220022

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    Paper Information

    Category: Special issue-Laser technology and its application

    Received: Jan. 6, 2022

    Accepted: --

    Published Online: Mar. 21, 2022

    The Author Email: Zhijian Xie (xiezhijian@njust.edu.cn)

    DOI:10.3788/IRLA20220022

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