Journal of Synthetic Crystals, Volume. 54, Issue 2, 190(2025)

Growth and Properties of β-Ga2O3 Single Crystal by Vertical Bridgman Method

HUANG Dongyang1, HUANG Haotian1, PAN Mingyan2, XU Ziqian1, JIA Ning2、*, and QI Hongji1,2
Author Affiliations
  • 1Fujia Gallium Technology Co., Ltd., Hangzhou 311421, China
  • 2Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • show less
    Figures & Tables(0)
    Tools

    Get Citation

    Copy Citation Text

    HUANG Dongyang, HUANG Haotian, PAN Mingyan, XU Ziqian, JIA Ning, QI Hongji. Growth and Properties of β-Ga2O3 Single Crystal by Vertical Bridgman Method[J]. Journal of Synthetic Crystals, 2025, 54(2): 190

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Nov. 29, 2024

    Accepted: Mar. 31, 2025

    Published Online: Mar. 31, 2025

    The Author Email: JIA Ning (jianing@siom.ac.cn)

    DOI:10.16553/j.cnki.issn1000-985x.2024.0301

    Topics