Infrared Hf-doped ZnO Transparent Conductive Film

Fig. 1. Microstructure of the HZO films. (a) XRD spectra of films under different annealing temperatures; (b) XRD spectra of films under different oxygen flow rates; (c) crystalline size of films under different oxygen flow rates; (d) structure of the HfO₂ (m phase), reproduced with permission

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Fig. 2. Surface morphology of the HZO films under different oxygen flow rates. (a) 0 mL/min; (b) 0.2 mL/min; (c) 0.4 mL/min; (d) 0.6 mL/min; (e) 0.8 mL/min

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Fig. 3. Optical properties of HZO films

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Fig. 4. Electrical properties of the HZO films

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Table 1. Structural parameters of HZO films under different annealing conditions

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Table 1. Structural parameters of HZO films under different annealing conditions

Annealing condition	2θ /(°)	d /Å	FWHM /(°)	D /nm
As-deposited	33.776	2.6515	1.181	8.00
Annealed at 400 ℃	34.410	2.6041	0.882	10.79
Annealed at 600 ℃	34.423	2.6032	0.802	11.87
Annealed at 800 ℃	34.485	2.5986	0.652	14.61

Table 2. Thickness of HZO films under different oxygen flow rates
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Table 2. Thickness of HZO films under different oxygen flow rates
Annealing condition Film thickness /nm
0 mL/min 0.2 mL/min 0.4 mL/min 0.6 mL/min 0.8 mL/min
As-deposited 370 440 343 341 300
Annealed at 800 ℃ 287 326 235 226 153

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Wenyuan Zhao, Mengyao Zhang, Ran Bi, Chuantao Zheng, Yiding Wang. Infrared Hf-doped ZnO Transparent Conductive Film[J]. Acta Optica Sinica, 2021, 41(20): 2031002

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