Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Frontiers of Optoelectronics, Volume. 5, Issue 3, 256(2012)

Direct band gap luminescence from Ge on Si pin diodes

E. KASPER1、*, M. OEHME1, J. WERNER1, T. AGUIROV2, and M. KITTLER2
Author Affiliations
  • 1Institut für Halbleitertechnik (IHT), University of Stuttgart, Stuttgart 70569, Germany
  • 2Joint Lab IHP/BTU Cottbus, Cottbus 03013, Germany
    • show less
    Abstract
    Figures&Tables (0)
    Equations (0)
    References (19)
    Tools
    Paper Information
    Topics
    Figures & Tables(0)
    Tools

    Get Citation

    Copy Citation Text

    E. KASPER, M. OEHME, J. WERNER, T. AGUIROV, M. KITTLER. Direct band gap luminescence from Ge on Si pin diodes[J]. Frontiers of Optoelectronics, 2012, 5(3): 256

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Received: Dec. 27, 2011

    Accepted: Mar. 27, 2012

    Published Online: Oct. 12, 2012

    The Author Email: E. KASPER (kasper@iht.uni-stuttgart.de)

    DOI:10.1007/s12200-012-0235-4

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology