Chinese Journal of Lasers, Volume. 52, Issue 5, 0501012(2025)

Research Progress on Mid‐Infrared Antimonide Semiconductor Lasers and Heterogeneous Integration Technology (Invited)

Yihang Chen1,2, Cheng’ao Yang1,2、*, Tianfang Wang1,2, Hongguang Yu1,2, Jianmei Shi1,2, Juntian Cao1,2, Haoran Wen1, Zhiyuan Wang1, Zhengqi Geng1, Yu Zhang1,2, Donghai Wu1,2, Yingqiang Xu1,2, Haiqiao Ni1,2, and Zhichuan Niu1,2、**
Author Affiliations
  • 1Key Laboratory for Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(18)
    Band structure of SCH laser[16]
    Band structure of asymmetric waveguide laser[16]
    Band structures of digital alloy barrier and graded-layer antimonide laser[23]
    Band structure of graded-index SCH laser[25]
    Scanning electron microscope (SEM) image of advanced sawtooth waveguide structure[29]
    Schematic diagram of AlGaInAsSb quinary alloy barrier[38]
    Band structures of antimonide type-I quantum well cascade laser[46]
    SEM image of LC-DFB laser with Cr metal grating[50]
    SEM image of LC-DFB laser with etched grating[57]
    SEM image of nanoimprinted LC-DFB laser[62]
    SEM image of LC-DFB laser with metal grating[65]
    Schematic of high-order grating socketed ridge-waveguide laser[67]
    Atomic force microscope (AFM)images after 3, 18, and 54 ML AlSb deposition on Si[71]. (a) 3 layers of AlSb; (b) 18 layers of AlSb; (c) 54 layers of AlSb
    Energy-band diagram of Sb-based laser grown on Si[77]
    Scanning transmission electron microscope (STEM)image of epitaxial GaSb grown on Si by ART[83]
    Schematics of silicon-based heteroepitaxy growth process [84]
    • Table 1. Key works of foreign researchers in development of antimonide lasers

      View table

      Table 1. Key works of foreign researchers in development of antimonide lasers

      YearPower /W

      Wavelength /

      μm

      Research unitDevice structureThreshold current density /(A/cm2
      19872.2AT&T BellDH1700 (pulsed)
      19862.2AT&T BellDH4700 (pulsed)
      1991

      0.8 (uncoated,

      pulsed)

      2.3MIT Lincoln LaboratoryDH1500 (pulsed)
      19920.19 (uncoated)2.1MIT Lincoln LaboratoryMQW260
      19961.22Sarnoff CorporationBroadened waveguide300
      19971.92Sarnoff CorporationStrained single quantum well115
      20061.962.0Fraunhofer IAFNarrow waveguide
      20101.51.95Stony Brook University in New YorkAsymmetric waveguide110
      201622Stony Brook University in New YorkType-I quantum well cascade80
    • Table 2. Key works of domestic researchers in development of antimonide lasers

      View table

      Table 2. Key works of domestic researchers in development of antimonide lasers

      YearPower /W

      Wavelength /

      μm

      Research unitDevice structureThreshold current density /(A/cm2
      19912.2Institute of Semiconductors, Chinese Academy of Sciences (CAS)DH
      19972.05Shanghai Institute of Microsystem and Information TechnologyMQW

      900

      (pulsed)

      20010.025 (uncoated)2.0Shanghai Institute of Microsystem and Information TechnologyMQW
      20090.042.0Changchun University of Science and TechnologyAsymmetric waveguide92
      20140.0282.4Institute of Semiconductors, CASStrained triple quantum well400
      20161.0582Institute of Semiconductors, CASStrained single quantum well88
      20191.42Institute of Semiconductors, CASStrained double quantum well
      20231.82Institute of Semiconductors, CASStrained double quantum well121
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    Yihang Chen, Cheng’ao Yang, Tianfang Wang, Hongguang Yu, Jianmei Shi, Juntian Cao, Haoran Wen, Zhiyuan Wang, Zhengqi Geng, Yu Zhang, Donghai Wu, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu. Research Progress on Mid‐Infrared Antimonide Semiconductor Lasers and Heterogeneous Integration Technology (Invited)[J]. Chinese Journal of Lasers, 2025, 52(5): 0501012

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    Paper Information

    Category: laser devices and laser physics

    Received: Jul. 23, 2024

    Accepted: Dec. 3, 2024

    Published Online: Mar. 8, 2025

    The Author Email: Yang Cheng’ao (yangchengao@semi.ac.cn), Niu Zhichuan (zcniu@semi.ac.cn)

    DOI:10.3788/CJL241082

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