Chinese Journal of Lasers, Volume. 52, Issue 5, 0501012(2025)
Research Progress on Mid‐Infrared Antimonide Semiconductor Lasers and Heterogeneous Integration Technology (Invited)
Fig. 3. Band structures of digital alloy barrier and graded-layer antimonide laser[23]
Fig. 5. Scanning electron microscope (SEM) image of advanced sawtooth waveguide structure[29]
Fig. 13. Atomic force microscope (AFM)images after 3, 18, and 54 ML AlSb deposition on Si[71]. (a) 3 layers of AlSb; (b) 18 layers of AlSb; (c) 54 layers of AlSb
Fig. 15. Scanning transmission electron microscope (STEM)image of epitaxial GaSb grown on Si by ART[83]
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Yihang Chen, Cheng’ao Yang, Tianfang Wang, Hongguang Yu, Jianmei Shi, Juntian Cao, Haoran Wen, Zhiyuan Wang, Zhengqi Geng, Yu Zhang, Donghai Wu, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu. Research Progress on Mid‐Infrared Antimonide Semiconductor Lasers and Heterogeneous Integration Technology (Invited)[J]. Chinese Journal of Lasers, 2025, 52(5): 0501012
Category: laser devices and laser physics
Received: Jul. 23, 2024
Accepted: Dec. 3, 2024
Published Online: Mar. 8, 2025
The Author Email: Yang Cheng’ao (yangchengao@semi.ac.cn), Niu Zhichuan (zcniu@semi.ac.cn)