Chinese Optics Letters, Volume. 6, Issue 4, 268(2008)

810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures

[in Chinese]*... [in Chinese], [in Chinese] and [in Chinese] |Show fewer author(s)
Author Affiliations
  • National Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022
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    CLP Journals

    [1] Wu Haibin, He Sumei, Wang Changling. Experimental Research on the Mechanism of Causing Fast Luminous Attenuation of White Lamp-LED[J]. Acta Optica Sinica, 2009, 29(5): 1363

    [2] Peixu Li, Ling Wang, Shuqiang Li, Wei Xia, Xin Zhang, Qingmin Tang, Zhongxiang Ren, Xiangang Xu, "MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications," Chin. Opt. Lett. 7, 06489 (2009)

    [3] Peixu Li, Kai Jiang, Shuqiang Li, Wei Xia, Xin Zhang, Qingmin Tang, Zhongxiang Ren, Xiangang Xu, "Influence of the upper waveguide layer thickness on optical field in asymmetric heterostructure quantum well laser diode," Chin. Opt. Lett. 8, 493 (2010)

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], "810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures," Chin. Opt. Lett. 6, 268 (2008)

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    Paper Information

    Received: Oct. 29, 2007

    Accepted: --

    Published Online: Apr. 21, 2008

    The Author Email: (lilincust@hotmail.com)

    DOI:

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