Journal of Infrared and Millimeter Waves, Volume. 41, Issue 6, 1009(2022)
Failure modes and analysis for HgCdTe linear photoconductive detectors
Figures & Tables(24)
Fig. 1. The schematic diagram of HgCdTe photoconductive detector (a) side view, (b) vertical view, (c) vertical view of serpentine geometry pixel, (d) side view of overlap contact geometry
Fig. 2. Photographs of HgCdTe photoconductive detector with two kinds of pixel geometry
Fig. 4. Diagram of signal and noise measurement of HgCdTe photoconductive detectors
Fig. 5. FTIR spectra of wide-band-spectrum HgCdTe photoconductive detectors
Fig. 6. Normal and abnormal spectra of narrow-band-spectrum photoconductive detectors
Fig. 7. Spectra of HgCdTe photoconductor passivated with SiO2 film at 300 K and 77 K
Fig. 8. Distribution of resistance of a linear detector with two abnormal pixels
Fig. 9. Photograph of two abnormal pixels together with EDS result
Fig. 10. Distribution of resistance of a linear detector with some abnormal pixels
Fig. 11. Polarizing microphotograph of pixels with abnormal resistance
Fig. 14. Photographs of two pixels with abnormal signal and noise before and after packaging
Fig. 15. Diagram of detector with normal and abnormal metal contact
Fig. 16. Diagram of voltage drop measurement for pixel-related ground electrode
Fig. 17. Comparison results of pixel-related voltage drop before and after ground electrode thickening
Fig. 18. Comparison of normalized resistance for two linear detectors after successive tests
Fig. 19. Variation of FOM for two linear detectors after successive tests
Table 1. A linear detector with two pixels of abnormal signal and noise
View tableView in ArticleTable 1. A linear detector with two pixels of abnormal signal and noise
像元编号 电阻/Ω 偏流/mA 信号/V 噪声/（V/Hz1/2） 响应率/（V/W） 黑体D*/（cmHz1/2W-1） 9 233 1.7 7.05×10-6 3.51×10-9 4.98×102 3.84×109 10 227 1.7 6.36×10-6 3.11×10-9 4.50×102 3.90×109 11 226 1.7 6.99×10-6 3.49×10-9 4.94×102 3.83×109 12 225 1.7 6.92×10-6 3.38×10-9 4.90×102 3.91×109 13 258 1.7 5.98×10-6 7.25×10-8 4.23×102 1.58×108 14 248 1.7 6.34×10-6 2.66×10-8 4.48×102 4.55×108
Table 2. A linear detector with three pixels of abnormal signal and noise
View tableView in ArticleTable 2. A linear detector with three pixels of abnormal signal and noise
像元编号 电阻/Ω 偏流/mA 信号/V 噪声/（V/Hz1/2） 响应率/（V/W） 黑体D* /（cmHz1/2W-1） 14 267 5 3.16×10-4 1.30×10-8 5.80×103 2.37×1010 15 274 5 3.17×10-4 1.28×10-8 5.82×103 2.41×1010 16 272 5 3.66×10-4 1.37×10-8 6.72×103 2.60×1010 17 276 5 3.50×10-4 1.43×10-8 6.43×103 2.39×1010 18 338 5 1.16×10-4 8.29×10-9 2.13×103 1.36×1010 19 327 5 1.31×10-4 8.46×10-9 2.40×103 1.50×1010 20 304 5 1.81×10-4 1.01×10-8 3.32×103 1.75×1010 21 269 5 2.51×10-4 1.15×10-8 4.60×103 2.12×1010 22 253 5 2.81×10-4 1.28×10-8 5.15×103 2.13×1010
Table 3. A linear detector with three abnormal pixels due to power burn-in
View tableView in ArticleTable 3. A linear detector with three abnormal pixels due to power burn-in
像元编号 阻值/Ω 信号/V 噪声/（V/Hz1/2） 老练前 老练后 老练前 老练后 老练前 老练后 10 43.4 56.7 4.92×10-6 5.60×10-6 9.00×10-8 1.00×10-7 11 43.5 74.5 4.48×10-6 5.01×10-6 8.00×10-8 9.00×10-8 12 43.5 122.2 4.44×10-6 5.21×10-6 8.00×10-8 1.40×10-7
Table 4. A linear detector with two pixels of abnormal crosstalk
View tableView in ArticleTable 4. A linear detector with two pixels of abnormal crosstalk
像元编号 电阻/Ω 偏流/mA 信号/V 噪声/（V/Hz1/2） 响应率/（V/W） 黑体D* /（cmHz1/2W-1） 5 276 2 1.16E-04 8.75E-09 3.73E+03 1.71E+10 6 266 2 1.13E-04 8.75E-09 3.65E+03 1.67E+10 7 136 2 5.69E-05 3.72E-09 1.83E+03 1.97E+10 8 136 2 5.69E-05 3.67E-09 1.83E+03 2.00E+10 9 272 2 1.07E-04 9.16E-09 3.44E+03 1.50E+10 10 272 2 1.09E-04 8.95E-09 3.50E+03 1.56E+10
Table 5. Summary of failure modes、origins and identification methods
View tableView in ArticleTable 5. Summary of failure modes、origins and identification methods
失效模式 可能原因 检查鉴定方法 编号 阻值 信号 噪声 探测率 串音 涉及像元数 1 增加 增加 增加 正常 部分 光谱偏短，材料不均匀 FTIR光谱测试 2 降低 降低 降低 降低 部分 光谱偏长，材料不均匀 FTIR光谱测试 3 正常 降低 降低 正常 全部 窗口截止 更换窗口 4 增加 降低 降低 降低 部分 像元中存在晶界结构 偏振模式显微镜 5 增加 降低 增加 降低 部分 光敏元损伤，包括划痕、钝化层脱落和位错增值等 显微镜 6 增加 增加 增加 降低 部分 电极层部分脱开 测厚显微镜 7 增加 增加 增加 正常 整体 芯片厚度偏薄 测厚显微镜 8 降低 降低 降低 正常 整体 芯片厚度偏厚 测厚显微镜 9 降低 降低 增加 降低 整体 芯片温度较大漂移 检查测温元件和芯片/冷头热接触 10 增加 降低 增加 降低 整体 芯片工艺中表面沾污或经历高温 检查工艺过程记录，测试器件电阻温度曲线 11 降低且相同或接近 降低 降低 正常 增加 相邻像元 像元并联 显微镜 12 正常或
偏大
正常 正常 正常 增加 整体 公共地线阻值偏大 检查地线电阻
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Hui QIAO, Ni-Li WANG, Tian-Yi LAN, Shui-Ping ZHAO, Qi-Zhi TIAN, Ye LU, Reng WANG, Qin HUO, Fan SHI, Yi-Dan TANG, Kai-Hui CHU, Jia JIA, Qing ZHOU, Xiao-Yu SUN, Pei-Lu JIANG, Yi LUO, Xin-Yi CHENG, Xiang-Yang LI. Failure modes and analysis for HgCdTe linear photoconductive detectors[J]. Journal of Infrared and Millimeter Waves, 2022, 41(6): 1009
Paper Information
Category: Research Articles
Received: May. 30, 2022
Accepted: --
Published Online: Feb. 6, 2023
The Author Email: Xiang-Yang LI (lixy@mail.sitp.ac.cn)
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