The third-generation semiconductor material silicon carbide offers significant application potential and strategic value due to its superior properties, including large bandwidth, high thermal conductivity and robust chemical stability. Wafer scribing represents a critical process in silicon carbide power device manufacturing, yet conventional diamond knife-wheel dicing methods remain dominant in this workflow. However, the high hardness and brittleness of silicon carbide has brought great challenges to the traditional processing technology, resulting in high processing cost, low yield, etc. Consequently, there is an urgent need for advanced dicing technologies to overcome these limitations. In this paper, the existing scribing methods for silicon carbide wafers at home and abroad are systematically reviewed, the principles and progress of knife-wheel scribing, laser ablation, laser thermal cracking, water-guided laser dicing, water-jet-assisted laser dicing, and laser internal modification dicing are comprehensively introduced. Strengths and weaknesses of these methods are rigorously compared and analyzed, followed by a discussion of future development trends in silicon carbide wafer dicing technology.