Fig. 1. Schematic diagram of the device under forward bias.正偏压下的器件结构示意图

Fig. 2. XRD patterns of the TiO₂:Er and Yb-codoped TiO₂:Er films annealed at 800 °C in O₂ ambient. 经氧气氛下800°C热处理的TiO₂:Er和TiO₂:(Yb, Er)薄膜的XRD谱

Fig. 3. Typical cross-sectional HRTEM images of (a) TiO₂:Er and (b) TiO₂:(Yb, Er) films annealed at 800 °C for 1 h on the SiO₂/Si substrates; typical HRTEM images of (c) TiO₂:Er and (d) TiO₂:(Yb, Er) films. 在热氧化的硅衬底上生长并经过氧气氛下800 °C热处理1 h后的(a) TiO₂:Er和(b) TiO₂:(Yb, Er)薄膜的截面HRTEM照片; (c) TiO₂:Er薄膜的HRTEM照片; (d) TiO₂:(Yb, Er)薄膜的HRTEM照片

Fig. 4. Two light-emitting devices with the TiO₂:Er and TiO₂:(Yb, Er) films: (a) Visible and near-infrared EL spectra under the same injection currents; integrated EL intensities of the bands peaking at (b) about 550 and (c) 1534 nm under different injection currents. 基于TiO₂:Er和TiO₂:(Yb, Er)薄膜的两种发光器件 (a) 在相同注入电流下获得的可见及近红外EL谱图; (b)约550和(c) 1534 nm处的发光峰在不同注入电流下的积分强度

Fig. 5. (a) I-V characteristics for the two light-emitting devices with the TiO₂:Er and TiO₂:(Yb, Er) films; (b) plot of InJ versus 1/Ecorresponding to the fast rising part of I-V characteristics in SiO₂ layer for the two LEDs with the TiO₂:Er and TiO₂:(Yb, Er) films, respectively. (a) 基于TiO₂:Er和TiO₂:(Yb, Er)薄膜的两种器件的I-V特性曲线; (b) 两种器件中的SiO₂层在I-V特性曲线的快速上升部分所对应的lnJ和1/E的关系曲线

Fig. 6. Schematic energy band diagram for the TiO₂:Er-based device under sufficiently high forward bias voltage and the schematic diagram of impact excitation and de-excitation processes for Er³⁺ ion. 在足够高的正向偏压下, 基于ITO/TiO₂:Er/SiO₂/n⁺-Si结构的发光器件的能带结构示意图以及Er³⁺离子的碰撞激发和退激发的示意图