Laser & Optoelectronics Progress, Volume. 62, Issue 15, 1514004(2025)

Effect of Notched Stress Concentration on the Fatigue Properties of Laser-Selective Zone-Melted AlSi10Mg

Li Ma1, Yu Pan2, Yingying Lin2, Bingqing Chen2、*, Taiqi Yan2, Yu Wu2, and Zijun Zhao2
Author Affiliations
  • 1Chinese People's Liberation Army Unit 93147, Guiyang 550000, Guizhou , China
  • 2Beijing Research Institute of Aeronautical Materials, Beijing 100095, China
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    References(21)

    [1] Ke Y, Ma P, Ma Y C et al. Microstructure and mechanical properties of AlSi10Mg alloy fabricated by selective laser melting[J]. Applied Laser, 39, 198-203(2019).

    [2] Gu P F, Qi T B, Chen L et al. Selective laser melting and forming VNbMoTaW refractory high entropy alloy[J]. Laser & Optoelectronics Progress, 60, 0514001(2023).

    [6] Yu K B. Study on microstructures and mechanical properties of AlSi10Mg alloy produced by selective laser melting[D](2024).

    [7] Sun B B, Fang L J, Zhang X J. Study on process optimization and microstructure of AlSi10Mg prepared by selective laser melting[J]. Welding Technology, 49, 5-8, 113(2020).

    [12] Liao D. Fatigue analyses and life prediction methods of notched members: from materials to structures[D](2023).

    [15] Yang X C, Jiang W J, Cao M et al. Microstructure and mechanical properties of laser-melted aluminum alloy in selected area[J]. Machine Tool & Hydraulics, 49, 21-25, 41(2021).

    [20] Liang E Q, Dai Y, Bai J et al. Microstructure and mechanical property of annealing heat treated AlSi10Mg alloy fabricated by selective laser melting[J]. Journal of Materials Engineering, 50, 156-165(2022).

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    Li Ma, Yu Pan, Yingying Lin, Bingqing Chen, Taiqi Yan, Yu Wu, Zijun Zhao. Effect of Notched Stress Concentration on the Fatigue Properties of Laser-Selective Zone-Melted AlSi10Mg[J]. Laser & Optoelectronics Progress, 2025, 62(15): 1514004

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Oct. 17, 2024

    Accepted: Jan. 2, 2025

    Published Online: Aug. 15, 2025

    The Author Email: Bingqing Chen (hwtkjcbq1984@163.com)

    DOI:10.3788/LOP242130

    CSTR:32186.14.LOP242130

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