Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers

Weichuan Du; Junjie Kang; Yi Li; Hao Tan; Kun Zhou; Yao Hu; Liang Zhang; Zhao Wang; Linhui Guo; Songxin Gao; Deyong Wu; Chun Tang

doi:10.3788/AOS201939.0614002

Acta Optica Sinica, Volume. 39, Issue 6, 0614002(2019)

Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers

Weichuan Du^1,2, Junjie Kang^1,2, Yi Li^1,2, Hao Tan^1,2, Kun Zhou^1,2、*, Yao Hu^1,2, Liang Zhang^1,2, Zhao Wang^1,2, Linhui Guo^1,2, Songxin Gao^1,2, Deyong Wu^1,2, and Chun Tang^1,2

Author Affiliations

¹ Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China

² The Key Laboratory of Science and Technology on High Energy Laser, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China

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Figures & Tables(4)

Fig. 1. Optical characteristics of film samples under different processing conditions. (a) Transmission curve; (b) optical constant; (c) film thickness versus facet reflectivity

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Fig. 2. Relationship between threshold current density and facet reflectivity

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Fig. 3. Differential quantum efficiency versus front facet reflectivity

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Fig. 4. P-I characteristic of device with 5% front facet reflectivity

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Weichuan Du, Junjie Kang, Yi Li, Hao Tan, Kun Zhou, Yao Hu, Liang Zhang, Zhao Wang, Linhui Guo, Songxin Gao, Deyong Wu, Chun Tang. Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers[J]. Acta Optica Sinica, 2019, 39(6): 0614002

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Paper Information

Category: Lasers and Laser Optics

Received: Sep. 12, 2018

Accepted: Feb. 25, 2019

Published Online: Jun. 17, 2019

The Author Email: Zhou Kun (zhoukun2011@sinano.ac.cn)

DOI:10.3788/AOS201939.0614002

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology