[1] [1] Michel J, Liu J, Kimerling L. High-performance Ge-on-Si photodetectors[J]. Nature Photon, 2010, 4(8): 527-534.

[2] [2] Kang Y, Liu H, Morse M, et al.. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain- bandwidth product[J]. Nature Photon, 2008, 3(1): 59-63.

[3] [3] Xue H Y, Xue C L, Cheng B W, et al.. Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm[J]. Chinese Physics B, 2009, 18(6): 2542-2544.

[4] [4] Cai Zhimeng, Zhou Zhiwen, Li Cheng, et al.. Characteristics of Si-based metal-germanium-metal photodectectors[J]. J Optoelectronics·Laser, 2008, 19(5): 587-590.

[5] [5] Zhou Zhiwen, He Jingkai, Wang Ruichun, et al.. Fabrication of Ge PIN photodiodes on silicon-on-insulator substrates under normal incidence[J]. J Optoelectronics·Laser, 2010, 21(11): 1609-1613.

[6] [6] Dosunmu O I, Cannon D D, Emsley M K, et al.. Resonant cavity enhanced Ge photodetectors for 1550 nm operation on reflecting Si substrates[J]. IEEE J Select Topics Quantum Electron, 2004, 10(4): 694-701.

[7] [7] Emsley, M K, Dosunmu O, Unlu M S. High- speed resonant- cavity- enhanced silicon photodetectors on reflecting silicon-on-insulator substrates[J]. IEEE Photonics Technology Letters, 2002, 14(4): 519-521.

[8] [8] Zhou Zhiwen, He Jingkai, Li Cheng, et al.. Growth of high quality Ge epitaxial films on Si substrate by low temperature buffer technique[J]. J Optoelectronics·Laser, 2011, 22(7): 1030-1033.

[9] [9] Li Chuanbo. The Epitaxy of Material and the Fabrication of Si-Based RCE Detector Operating at 1.55 μm [D]. Beijing: Institute of Semiconductors, Chinese Academy of Sciences, 2005. 30-45.

[10] [10] Born M, Wolf E. Principles of Optics: Electromagnetic Theory of Propagation, Interference and Diffraction of Light[M]. Oxford: Pergamon Press, 1964. 60-100.

[11] [11] Liu J, Michel J, Giziewicz W, et al.. High- performance, tensile- strained Ge p- i- n photodetectors on a Si platform[J]. Appl Phys Lett, 2005, 87(10): 103501.