Acta Optica Sinica, Volume. 43, Issue 10, 1014004(2023)
Research on 795 nm High Power External Cavity Semiconductor Laser
Fig. 1. Schematic diagram of external cavity mode, internal cavity mode, and VBG feedback bandwidth of semiconductor laser
Fig. 2. Relationship between volume Bragg grating diffraction efficiency and incident wavelength and incident angle. (a) Incident wavelength; (b) incident angle
Fig. 4. Laser output spectrum of the semiconductor laser before and after mode locked by VBG
Fig. 5. Output power characteristic curves of VBG external cavity semiconductor lasers
Fig. 6. Spectral analysis under different driving current conditions. (a) Spectrum of gain chip free-running; (b) spectrum of external cavity semiconductor laser with VBG
Fig. 7. Spectrum of external cavity semiconductor laser at different operating temperatures
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Wei Zhang, Li Zhong, Deshuai Zhang, Xia Wu, Yuxi Ni, Suping Liu, Xiaoyu Ma. Research on 795 nm High Power External Cavity Semiconductor Laser[J]. Acta Optica Sinica, 2023, 43(10): 1014004
Category: Lasers and Laser Optics
Received: Nov. 18, 2022
Accepted: Jan. 29, 2023
Published Online: May. 9, 2023
The Author Email: Zhong Li (zhongli@semi.ac.cn)