The Influence of Channel Width on Total Ionizing Dose Responses of the H-gate DSOI NMOSFET

YANG Hongyi; ZHENG Qiwen; CUI Jiangwei; LI Yudong; GUO Qi

doi:10.13911/j.cnki.1004-3365.240244

Microelectronics, Volume. 55, Issue 1, 1(2025)

The Influence of Channel Width on Total Ionizing Dose Responses of the H-gate DSOI NMOSFET

YANG Hongyi^1,2,3,4, ZHENG Qiwen^1,2,3, CUI Jiangwei^1,2,3, LI Yudong^1,2,3, and GUO Qi^1,2,3

Author Affiliations

¹Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, P. R. China

²State Key Laboratory of Functional Materials and Devices for Special Environmental Conditions, Urumqi 830011, P. R. China

³Xinjiang Key Laboratory of Extreme Environment Electronics, Urumqi 830011, P. R. China

⁴University of Chinese Academy of Sciences, Beijing 100049, P. R. China

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YANG Hongyi, ZHENG Qiwen, CUI Jiangwei, LI Yudong, GUO Qi. The Influence of Channel Width on Total Ionizing Dose Responses of the H-gate DSOI NMOSFET[J]. Microelectronics, 2025, 55(1): 1

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Paper Information

Special Issue:

Received: Jul. 17, 2024

Accepted: Jun. 19, 2025

Published Online: Jun. 19, 2025

The Author Email:

DOI:10.13911/j.cnki.1004-3365.240244

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