Preparation Research of p-on-n Long-Wave 1280×1024 Infrared Detectors with 10 &#956;m Pixel Pitch

Xin WANG; Shi-guang LIU; Yi ZHANG; Dan WANG; Ti NING

doi:10.3969/j.issn.1672-8785.2024.11.002

INFRARED, Volume. 45, Issue 11, 13(2024)

Preparation Research of p-on-n Long-Wave 1280×1024 Infrared Detectors with 10 μm Pixel Pitch

Xin WANG, Shi-guang LIU, Yi ZHANG, Dan WANG, and Ti NING

Author Affiliations

North China Research Institute of Electro-Optics, Beijing 100015, China

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References(3)

[1] [1] Rogalski A. History of Infrared Detectors [J]. Opto-Electron Rev, 2012, 20(3): 279-308.

[2] [2] Mollard L. HgCdTe FPAs Made by Arsenic-ion Implantation [C]. SPIE, 2008, 6940: 69400F.

[4] [4] Gravrand O, Mollard L, Largeron C, et al. Study of LWIR and VLEIR Focal Plane Array Developments: Comparison Between p-on-n and Different n-on-p Technologies on LPE HgCdTe [J]. Journal of Electronic Materials, 2009, 38(8): 1733-1740.

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WANG Xin, LIU Shi-guang, ZHANG Yi, WANG Dan, NING Ti. Preparation Research of p-on-n Long-Wave 1280×1024 Infrared Detectors with 10 μm Pixel Pitch[J]. INFRARED, 2024, 45(11): 13

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Paper Information

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Received: Nov. 13, 2023

Accepted: Dec. 25, 2024

Published Online: Dec. 25, 2024

The Author Email:

DOI:10.3969/j.issn.1672-8785.2024.11.002

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology