Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching

Wenhao Geng; Guang Yang; Xuqing Zhang; Xi Zhang; Yazhe Wang; Lihui Song; Penglei Chen; Yiqiang Zhang; Xiaodong Pi; Deren Yang; Rong Wang

doi:10.1088/1674-4926/43/10/102801

Journal of Semiconductors, Volume. 43, Issue 10, 102801(2022)

Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching

Wenhao Geng^1,2, Guang Yang³, Xuqing Zhang^1,2, Xi Zhang², Yazhe Wang², Lihui Song², Penglei Chen², Yiqiang Zhang⁴, Xiaodong Pi^1,2、*, Deren Yang^1,2, and Rong Wang^1,2、**

Author Affiliations

¹State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

²Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou 311200, China

³Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, China

⁴School of Materials Science and Engineering & College of Chemistry, Zhengzhou University, Zhengzhou 450001, China

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References(35)

[1] R Huang, Y Tao, S Bai et al. Design and fabrication of a 3.3 kV 4H-SiC MOSFET. J Semiconduct, 36, 094002(2015).

[2] A Chatterjee, P Stevenson, S D Franceschi et al. Semiconductor qubits in practice. Nat Rev Phys, 3, 157(2021).

[3] F Gao, W J Weber. Mechanical properties and elastic constants due to damage accumulation and amorphization in SiC. Phys Rev B, 69, 224108(2004).

[4] X Liu, J Zhang, B Xu et al. Deformation of 4H-SiC: the role of dopants. Appl Phys Lett, 120, 052105(2022).

[5] W Wang, B Zhang, Y Shi et al. Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2. J Mater Process Tech, 295, 117150(2021).

[6] M Sasaki, K Tamura, H Sako et al. Analysis on generation of localized step-bunchings on 4H-SiC(0001) Si face by synchrotron X-ray topography. Mater Sci Forum, 778–780, 398(2014).

[7] M Sasaki, H Matsuhata, K Tamura et al. Synchrotron X-Ray topography analysis of local damage occurring during polishing of 4H-SiC wafers. Jpn J Appl Phys, 54, 091301(2015).

[8] Z Zhang, H Cai, D Gan et al. A new method to characterize underlying scratches on SiC wafers. CrystEngComm, 21, 1200(2019).

[9] Y Zhang, L Zhang, K Chen et al. Rapid subsurface damage detection of SiC using inductivity coupled plasma. Int J Extrem Manuf, 3, 035202(2021).

[10] M Dudley, N Zhang, Y Zhang et al. Nucleation of c-axis screw dislocations at substrate surface damage during 4H-silicon carbide homo-epitaxy. Mater Sci Forum, 645–648, 295(2010).

[11] K Ashida, D Dojima, S Torimi et al. Rearrangement of surface structure of 4° off-axis 4H-SiC (0001) epitaxial wafer by high temperature annealing in Si/Ar ambient. Mater Sci Forum, 924, 249(2018).

[12] K Ashida, D Dojima, Y Kutsuma et al. Evaluation of polishing-induced subsurface damage of 4H-SiC (0001) by cross-sectional electron backscattered diffraction and synchrotron x-ray micro-diffraction. MRS Adv, 1, 3697(2016).

[13] H Sako, H Matsuhata, M Sasaki et al. Micro-structural analysis of local damage introduced in subsurface regions of 4H-SiC wafers during chemo-mechanical polishing. J Appl Phys, 119, 135702(2016).

[14] Z Xu, Z He, Y Song et al. Topic review: application of Raman spectroscopy characterization in micro/nano-machining. Micromachines, 9, 361(2018).

[15] H Li, C Cui, S Bian et al. Double-sided and single-sided polished 6H-SiC wafers with subsurface damage layer studied by Mueller matrix ellipsometry. J Appl Phys, 128, 235304(2020).

[16] J Yin, Q Bai, B Zhang. Methods for detection of subsurface damage: a review. Chin J Mech Eng, 31, 41(2018).

[17] L Wu, B Yu, P Zhang et al. Rapid identification of ultrathin amorphous damage on monocrystalline silicon surface. Phys Chem Chem Phys, 22, 12987(2020).

[18] S Gao, R Kang, D Guo et al. Study on the subsurface damage distribution of the silicon wafer ground by diamond wheel. Adv Mat Res, 126–128, 113(2010).

[19] P Zhou, S Xu, Z Wang et al. A load identification method for the grinding damage induced stress (GDIS) distribution in silicon wafers. Int J Mach Tools Manuf, 107, 1(2016).

[20] H Sekhar, T Fukuda, Y Kida et al. The impact of damage etching on fracture strength of diamond wire sawn monocrystalline silicon wafers for photovoltaics use. Jpn J Appl Phys, 57, 126501(2018).

[21] H Luo, J Li, G Yang et al. Electronic and optical properties of threading dislocations in n-type 4H-SiC. ACS Appl Electron Mater, 4, 1678(2022).

[22] J Liu, J Liu, C Liu et al. 3D dark-field confocal microscopy for subsurface defects detection. Opt Lett, 45, 660(2020).

[23] C Youtsey, L T Romano, I Adesida. Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations. Appl Phys Lett, 73, 10(1998).

[24] J L Weyher, D H van Dorp, J J Kelly. Principles of electroless photoetching of non-uniformly doped GaN: kinetics and defect revealing. J Cryst Growth, 430, 21(2015).

[25] S Lazar, J L Weyher, L Macht et al. Nanopipes in GaN: photo-etching and TEM study. Eur Phys J Appl Phys, 27, 275(2004).

[26] J L Weyher, S Lazar, J Borysiuk et al. Defect-selective etching of SiC. Phys Stat Sol A, 202, 578(2005).

[27] J L Weyher. Defect sensitive etching of nitrides: appraisal of methods. Cryst Res Technol, 47, 333(2012).

[28] J L Weyher, J Smalc-Koziorowska, M Bańkowska et al. Photo-etching of GaN: revealing nano-scale non-homogeneities. J Cryst Growth, 426, 153(2015).

[29] L Macht, J J Kelly, J L Weyher et al. An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology. J Cryst Growth, 273, 347(2005).

[30] D H Van Dorp, J L Weyher, J J Kelly. Anodic etching of SiC in alkaline solutions. J Micromech Microeng, 17, 50(2007).

[31] H Harima, S Nakashima, T Uemura. Raman scattering from anisotropic LO-phonon-plasmon-coupled mode in n-type 4H- and 6H-SiC. J Appl Phys, 78, 1996(1995).

[32] N A Mahadik, R E Stahlbush, S B Qadri et al. Structure and morphology of inclusions in 4 offcut 4H-SiC epitaxial layers. J Electron Mater, 40, 413(2011).

[33] M Katsuno, N Ohtani, J Takahashi et al. Mechanism of molten KOH etching of SiC single crystals: comparative study with thermal oxidation. Jpn J Appl Phys, 38, 4661(1999).

[34] Y Gao, Z Zhang, R Bondokov et al. The effect of doping concentration and conductivity type on preferential etching of 4H-SiC by molten KOH. MRS Online Proceedings Library, 815, 6(2004).

[35] B Zhu, D Zhao, H Zhao. A study of deformation behavior and phase transformation in 4H-SiC during nanoindentation process via molecular dynamics simulation. Ceram Int, 45, 5150(2019).

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Wenhao Geng, Guang Yang, Xuqing Zhang, Xi Zhang, Yazhe Wang, Lihui Song, Penglei Chen, Yiqiang Zhang, Xiaodong Pi, Deren Yang, Rong Wang. Identification of subsurface damage of 4H-SiC wafers by combining photo-chemical etching and molten-alkali etching[J]. Journal of Semiconductors, 2022, 43(10): 102801

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Paper Information

Category: Articles

Received: Mar. 26, 2022

Accepted: --

Published Online: Nov. 18, 2022

The Author Email: Xiaodong Pi (xdpi@zju.edu.cn), Rong Wang (rong_wang@zju.edu.cn)

DOI:10.1088/1674-4926/43/10/102801

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology