The failure mechanism of Au/Al bonding in thin film HICs were introduced, a new technique to solve Au/Al bonding failure was proposed. It was found that the Au/Al interface formed by the aluminum wire and the Au guide band of the film was cavitated by atomic diffusion, and the bonding wires at the root of the bond were broken. By changing interlaminar structure in the bonding zone, the single metallization system was realized, and the formation of intermetallic compounds was effectively avoided. The results of this study had reference value for broadening the applications of ceramic based thin film HICs.