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Chinese Journal of Lasers, Volume. 47, Issue 1, 0105002(2020)

Improving Slow-Axis Laser Beam Quality of Semiconductor Laser with Edge Adiabatic Package

Biyao Zhao1,2, Hongqi Jing1、*, Li Zhong1,2, Yuxuan Man1,2, Xuefeng Ban1,2, Suping Liu1, and Xiaoyu Ma1,2
Author Affiliations
  • 1National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences,Beijing 100049, China
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    AbstractGet PDF(in Chinese)
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    References (21)
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    Figures & Tables(14)
    Diagram of edge adiabatic package principle

    Fig. 1. Diagram of edge adiabatic package principle

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    Temperature distributions of laser COS under different thermal powers Pth when contact width W=100 μm. (a) Pth=0.5 W;(b) Pth=0.7 W; (c) Pth=0.9 W; (d) Pth=1.1 W; (e) Pth=1.3 W; (f) Pth=1.5 W

    Fig. 2. Temperature distributions of laser COS under different thermal powers Pth when contact width W=100 μm. (a) Pth=0.5 W;(b) Pth=0.7 W; (c) Pth=0.9 W; (d) Pth=1.1 W; (e) Pth=1.3 W; (f) Pth=1.5 W

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    Temperature distribution of active region along slow axis under different thermal powers Pth

    Fig. 3. Temperature distribution of active region along slow axis under different thermal powers Pth

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    Maximum temperature at center of chip under different contact widths W

    Fig. 4. Maximum temperature at center of chip under different contact widths W

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    Thermal resistance of laser COS under different contact widths W

    Fig. 5. Thermal resistance of laser COS under different contact widths W

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    Variation in chip temperature with contact width W. (a) W=100 μm; (b) W=200 μm; (c) W=300 μm; (d) W=400 μm; (e) W=500 μm

    Fig. 6. Variation in chip temperature with contact width W. (a) W=100 μm; (b) W=200 μm; (c) W=300 μm; (d) W=400 μm; (e) W=500 μm

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    Temperature distribution of active region along slow axi sunder different contact widths W

    Fig. 7. Temperature distribution of active region along slow axi sunder different contact widths W

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    Structures of edge adiabatic package and normal package. (a) Top view of edge adiabatic package structure; (b) side view of edge adiabatic package structure; (c) side view of normal package structure

    Fig. 8. Structures of edge adiabatic package and normal package. (a) Top view of edge adiabatic package structure; (b) side view of edge adiabatic package structure; (c) side view of normal package structure

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    COS experimental diagram of edge adiabatic package

    Fig. 9. COS experimental diagram of edge adiabatic package

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    Variations in parameters related to beam quality with current for edge adiabatic package and normal package. (a) Slow axis divergence angle; (b) BPP; (c) M2

    Fig. 10. Variations in parameters related to beam quality with current for edge adiabatic package and normal package. (a) Slow axis divergence angle; (b) BPP; (c) M2

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    Slow axis divergence angle versus contact width W

    Fig. 11. Slow axis divergence angle versus contact width W

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    Thermal resistance Rth of laser under different contact widths W

    Fig. 12. Thermal resistance Rth of laser under different contact widths W

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    • Table 1. Related material parameters of ANSYS 18.0

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      Table 1. Related material parameters of ANSYS 18.0

      IndexMaterialSize /(μm×μm×μm)k /(W·cm-1·K-1)
      ChipGaAs/AlxGa1-xAs500×900×1.20.55
      Heat sourceGaAs/AlxGa1-xAs100×900×0.10.55
      Solder layerIn200×900×100.82
      Transition heat sinkBeO4000×4500×1002.60

    • Table 2. Comparison of photoelectric characteristics of edge adiabatic packages and normal package devices

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      Table 2. Comparison of photoelectric characteristics of edge adiabatic packages and normal package devices

      Contact widthW /μmThreshold currentIth /AElectro-opticalconversionefficiency η /%
      2000.1860
      5000.1763
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    Biyao Zhao, Hongqi Jing, Li Zhong, Yuxuan Man, Xuefeng Ban, Suping Liu, Xiaoyu Ma. Improving Slow-Axis Laser Beam Quality of Semiconductor Laser with Edge Adiabatic Package[J]. Chinese Journal of Lasers, 2020, 47(1): 0105002

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    Paper Information

    Category: beam transmission and control

    Received: Jun. 26, 2019

    Accepted: Sep. 26, 2019

    Published Online: Jan. 9, 2020

    The Author Email: Hongqi Jing (jinghq@semi.ac.cn)

    DOI:10.3788/CJL202047.0105002

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology