Terahertz emission from layered GaTe crystal due to surface lattice reorganization and in-plane noncubic mobility anisotropy

Jiangpeng Dong; Kevin-P. Gradwohl; Yadong Xu; Tao Wang; Binbin Zhang; Bao Xiao; Christian Teichert; Wanqi Jie

doi:10.1364/PRJ.7.000518

Photonics Research, Volume. 7, Issue 5, 518(2019)

Terahertz emission from layered GaTe crystal due to surface lattice reorganization and in-plane noncubic mobility anisotropy

Jiangpeng Dong¹, Kevin-P. Gradwohl², Yadong Xu^1、*, Tao Wang¹, Binbin Zhang¹, Bao Xiao¹, Christian Teichert², and Wanqi Jie¹

Author Affiliations

¹State Key Laboratory of Solidification Processing, Ministry of Industry and Information Technology (MIIT) Key Laboratory of Radiation Detection Materials and Devices, School of Materials and Engineering, Northwestern Polytechnical University, Xi’an 710072, China

²Institute of Physics, Montanuniversitaet Leoben, Leoben 8700, Austria

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Jiangpeng Dong, Kevin-P. Gradwohl, Yadong Xu, Tao Wang, Binbin Zhang, Bao Xiao, Christian Teichert, Wanqi Jie, "Terahertz emission from layered GaTe crystal due to surface lattice reorganization and in-plane noncubic mobility anisotropy," Photonics Res. 7, 518 (2019)

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Paper Information

Category: Spectroscopy

Received: Dec. 11, 2018

Accepted: Mar. 6, 2019

Published Online: Apr. 15, 2019

The Author Email: Yadong Xu (xyd220@nwpu.edu.cn)

DOI:10.1364/PRJ.7.000518

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology