Fig. 1. Distributions of P⁺ implantation depth under different implantation energies. (a) Samples of group A; (b) samples of group B

Fig. 2. Section views of epitaxial material. (a) Epitaxial wafer structure without etch, samples of group A; (b) epitaxial wafer structure for etching InGaAs contact layer and 600 nm InP cladding layer, samples of group B

Fig. 3. Process flow charts of two groups of samples. (a) Group A; (b) group B

Fig. 4. Blue-shift wavelength of sample A as a function of annealing temperature under different implantation energies

Fig. 5. Variation in blue-shift of wavelength at different annealing temperatures and time

Fig. 6. PL intensity of sample A as a function of annealing temperature under different implantation energies

Fig. 7. Variation in PL intensity of sample A at different annealing temperatures and time

Fig. 8. FWHM of sample A as a function of annealing temperature under different implantation energies

Fig. 9. Comparison of PL spectra between samples A and B