Chinese Journal of Lasers, Volume. 25, Issue 1, 21(1998)
LPE of InGaAsP/GaAs Semiconductor Lasers
References(2)
[1] [1] J. G. Endriz, M. Vakili, G. S. Browder et al.. High power diode laser arrays. IEEE J. Quant. Electr., 1992, 28(4):952～965
[2] [2] S. Mukai, Y. Tsunekawa, Y. Takabe et al.. Very low-threshold seperate-confinement-heterostructure lasers prepared by liquid phase epitaxy. J. Appl. Phys., 1985, 58(2):1052～1053
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. LPE of InGaAsP/GaAs Semiconductor Lasers[J]. Chinese Journal of Lasers, 1998, 25(1): 21
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