LPE of InGaAsP/GaAs Semiconductor Lasers

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Chinese Journal of Lasers, Volume. 25, Issue 1, 21(1998)

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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A modified liquid phase epitaxy method was used to grow InGaAsP materials on the GaAs substrate. The FWHM of photoluminescence at 10 K was 14 meV, wafers of SCH multilayer epitaxial structures were obtained with a threshold current density of 300 A/cm 2, and the hgihest CW output power obtained from wide stripe lasers was 2.1 W.

Keywords

SCH threshold current density LPE

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. LPE of InGaAsP/GaAs Semiconductor Lasers[J]. Chinese Journal of Lasers, 1998, 25(1): 21

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Paper Information

Category: Laser physics

Received: Oct. 28, 1996

Accepted: --

Published Online: Oct. 18, 2006

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Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology