Fig. 1. 3D structural diagram of charge-free layer InGaAs/Si APD

Fig. 2. Effect of different dielectric materials in the grooved ring on the charge-free layer InGaAs/Si APD. (a) Current; (b) current at 95%V_b; (c) avalanche voltage

Fig. 3. Changes of recombination rate of charge-free layer InGaAs/Si APD with media. (a) Section diagram of recombination rate structure; (b) recombination rate curves taken at X=16.229

Fig. 4. Changes of electron and hole concentrations of charge-free layer InGaAs/Si APD with media. (a) Electron concentration in structural section; (b) hole concentration in structural section; (c) electron concentration at X=16.229; (d) hole concentration at X=16.229

Fig. 5. Effect of different dielectric materials in the grooved ring on the charge-free layer InGaAs/Si APD. (a) Conduction band of bonding interface; (b) valence band of bonding interface; (c) charge concentration

Fig. 6. Effect of different dielectric materials in the grooved ring on the charge-free layer InGaAs/Si APD. (a) Impact ionization rate (R_IIR) of structural section; (b) impact ionization rate at X=16.229; (c) electron ionization coefficient at X=16.229; (d) hole ionization coefficient at X=16.229

Fig. 7. Variation of electric field in the charge-free layer InGaAs/Si APD with media. (a) Electric field of structural section; (b) electric field at X=16.229

Fig. 8. Variation of InGaAs/Si APD gain with media. (a) Gain curves; (b) gain at 95%V_b

Fig. 9. 3 dB bandwidth curves of InGaAs/Si APD without charge layer

Fig. 10. Variation of electron and hole rates in the charge-free layer InGaAs/Si APD at X=16.229 with media. (a) Electron rate; (b) hole rate

Fig. 11. Gain-bandwidth product of charge-free layer InGaAs/Si APD