Chinese Journal of Lasers, Volume. 51, Issue 2, 0206002(2024)

Bismuth‐Doped Phosphosilicate Fiber for O+E Band Amplification

Xiaoke Yin, Le He, Shaokun Liu, Yingbo Chu, Nengli Dai*, and Jinyan Li
Author Affiliations
  • Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, Hubei, China
  • show less
    Figures & Tables(7)
    Refractive index profile of Bi-doped fiber preform with cross-sectional image of BPSF shown in inset
    Absorption spectrum of BPSF
    Experimental setup for unsaturated loss measurement
    Fiber loss versus 1240 nm pump power
    Experimental setup for gain measurement of Bi-doped fiber
    Measurement results. (a) ASE spectrum under 1240 nm pump; (b) output spectrum when fiber length is 140 m with input spectrum shown in inset
    Measured results of BPSF amplification performance
    Tools

    Get Citation

    Copy Citation Text

    Xiaoke Yin, Le He, Shaokun Liu, Yingbo Chu, Nengli Dai, Jinyan Li. Bismuth‐Doped Phosphosilicate Fiber for O+E Band Amplification[J]. Chinese Journal of Lasers, 2024, 51(2): 0206002

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Fiber optics and optical communication

    Received: Mar. 9, 2023

    Accepted: May. 16, 2023

    Published Online: Jan. 4, 2024

    The Author Email: Dai Nengli (dainl@mail.hust.edu.cn)

    DOI:10.3788/CJL230605

    CSTR:32183.14.CJL230605

    Topics