Fig. 1. Crystal structure of InSb

Fig. 2. Brillouin zone (a) and band structure (b) of InSb crystal (calculated by empirical pseudopotential method without spin-orbit coupling)

Fig. 3. Band gap of energy valley of crystal InSb

Fig. 4. Band gap of InSb crystal variation with temperature

Fig. 5. Fermi level of InSb crystal variation with temperature for different shallow donor or acceptor concentration

Fig. 6. Band gap of some typical compound semiconductors and their corresponding lattice constant

Fig. 7. Minimum direct band gap and electron effective mass at Γ-point of In_1−xGa_xSb alloy variation with GaSb content x

Fig. 8. Phase relation in the pseudo-binary system of InSb-GaSb

Fig. 9. Lattice constant of In_1−xGa_xSb alloy variation with Ga composition

Fig. 10. Band gap of InGaNSb alloy and its lattice constant

Fig. 11. Band gap of In_1−xAl_xSb alloy variation with Al composition

Fig. 12. 320×256 MBE grown InSb (a) and In_1−xAl_xSb (b) IRFPA dark current distribution (@90 K, −0.168 V bias (a) and −0.183 V bias (b))

Fig. 13. Band gap of InAs_1−xSb_x alloy variation with Sb compositionx

Fig. 14. Phase relation in the pseudo-binary system of InSb-InAs

Fig. 15. Mobility of InAs_1−xSb_x alloy variation with Sb composition

Fig. 16. Band gap of quarternary alloy (GaSb)_1−z(InAs_0.91Sb_0.09)_z variation with composition z

Fig. 17. Spectral response curve of InBi_xSb_1−xphoto diode

Fig. 18. Band gap of InBi_0.04Sb_0.96 alloy variation with temperature

Fig. 19. Phase relation in the pseudo-binary material of InSb-TlSb

Fig. 20. Energy band diagram of In_1−xTl_xSb and Hg_1−xCd_xTe with 0.1 eV band gap

Fig. 21. Band gap of In_1−xTl_xSb alloy variation with Tl composition x

Fig. 22. Spectral response curve of In_1−xTl_xSb photo diode

Fig. 23. Band gap of InN_xSb_1−x alloy variation with N composition

Fig. 24. Band gap of InN_xSb_1−x alloy variation before and after annealing

Fig. 25. Band gap of InSb quantum wire variation with wire diameter

Fig. 26. Photo response curve of InSb quantum wire with infrared light incident frequency under room temperature @1 Hz

Fig. 27. InSb self-assembly QD barrier detector. QD-BIRD structure ( Left), Band diagram of QD-BIRD absorption zone (upper right), Band diagram of InSb QD area in the absorption zone (lower right)

Fig. 28. PL spectrum (a) and quantum efficiency at different working temperatures (b) of InSb QD barrier detector

Fig. 29. Transmission electron microscope (TEM) photos of InSb colloidal quantum dots (a), high resolution TEM image (b), light absorption spectrum (black line) and photofluorescence spectrum (red line) (c)