Fig. 1. Structure of cBN-based pin photodetector

Fig. 2. Numerical calculation model of the photodetector

Fig. 3. Spectral response curves of the photodetector

Fig. 4. Photocurrent of p-type cBN layer with different doping concentrations

Fig. 5. Dark current of p-type cBN layer with different doping concentrations

Fig. 6. Internal quantum efficiency of p-type cBN layer with different doping concentrations

Fig. 7. Photocurrent of i-type cBN layer with different doping concentrations

Fig. 8. Dark current of i-type cBN layer with different doping concentrations

Fig. 9. Internal quantum efficiency of i-type cBN layer with different doping concentrations

Fig. 10. Photocurrent of n-type cBN layer with different doping concentrations

Fig. 11. Dark current of n-type cBN layer with different doping concentrations

Fig. 12. Internal quantum efficiency of n-type cBN layer with different doping concentrations

Fig. 13. Photocurrent of p-type cBN layer with different thicknesses

Fig. 14. Dark current of p-type cBN layer with different thicknesses

Fig. 15. Internal quantum efficiency of p-type cBN layer with different thicknesses

Fig. 16. Photocurrent of i-type cBN layer with different thicknesses

Fig. 17. Dark current of i-type c-BN layer with different thicknesses

Fig. 18. Internal quantum efficiency of i-type cBN layer with different thicknesses

Fig. 19. Photocurrent of n-type cBN layer with different thicknesses

Fig. 20. Dark current of n-type cBN layer with different thicknesses

Fig. 21. Internal quantum efficiency of n-type cBN layer with different thicknesses