Application of ZnCdS:Mn/ZnS Quantum Dots in Silicon-Based Ultraviolet Detectors

Fig. 1. Optical properties and luminescence mechanism of doped quantum dots. (a) Absorption fluorescence spectra of Mn-doped quantum dots; (b) schematic diagram of energy level transition

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Fig. 2. Design principle of the concentrating structure

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Fig. 3. Design and actual transmittance curves of short wave pass cut-off color filter film

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Fig. 4. Simulation results of different structures. (a) Schematic diagram; (b) ray tracing diagram; (c) cutaway diagram

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Fig. 5. Photoelectric conversion capability of PIN. (a) Responsivity; (b) external quantum efficiency

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Table 1. Comparison of the original PIN parameters and the parameters after adding the concentrating structure
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Table 1. Comparison of the original PIN parameters and the parameters after adding the concentrating structure
Parameter Response time τ /ms Dark current I_d /pA NEP /（W⋅Hz^-1/2）
Test conditions U=0 V，X_RL=1 kΩ U=10 mV U=0 V，λ=320 nm
PIN 0.033 200 85.2×10^-15
PIN with concentrating structure 0.924 200 19.9×10^-15

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Xiangyan Zhou, Wenbin Xiang, Yongji Chen, Yufen Yuan, Yiping Cui, Jiayu Zhang. Application of ZnCdS:Mn/ZnS Quantum Dots in Silicon-Based Ultraviolet Detectors[J]. Laser & Optoelectronics Progress, 2022, 59(17): 1704001

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