Journal of Semiconductors, Volume. 42, Issue 8, 084101(2021)

Reliability evaluation on sense-switch p-channel flash

Side Song1, Guozhu Liu1,2, Hailiang Zhang1, Lichao Chao1, Jinghe Wei1, Wei Zhao1, Genshen Hong1, and Qi He1
Author Affiliations
  • 1The 58th Institution of Electronic Science and Technology Group Corporation of China, Wuxi 214035, China
  • 2School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
  • show less
    Figures & Tables(4)
    (Color online) (a) The three-dimensional sense-switch p-channel flash diagram. (b) The basic working schematic.
    (Color online) (a) The threshold voltage and drive current as a function of the program and erase cycles. (b) Electron trapping in the tunnel oxide or spacer at the drain side when programmed.
    (Color online) (a) Current–time curve during read stress at room temperature. (b) I–V characteristic before and after read stress. I–V characteristic before and after high temperature storage (c) without cycling and (d) with 500 program and erase cycles before DRB. (e) Degradation of drive current versus time in bake. (f) I–V characteristic of the erased state device under high temperature storage.
    (Color online) (a) The output characteristics of the programmed switch. (b) The programmed and erased state of the switch under different temperatures. (c) The threshold voltage and drive current with different temperature cycling.
    Tools

    Get Citation

    Copy Citation Text

    Side Song, Guozhu Liu, Hailiang Zhang, Lichao Chao, Jinghe Wei, Wei Zhao, Genshen Hong, Qi He. Reliability evaluation on sense-switch p-channel flash[J]. Journal of Semiconductors, 2021, 42(8): 084101

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Articles

    Received: Feb. 3, 2021

    Accepted: --

    Published Online: Aug. 6, 2021

    The Author Email:

    DOI:10.1088/1674-4926/42/8/084101

    Topics