Journal of Semiconductors, Volume. 42, Issue 8, 084101(2021)
Reliability evaluation on sense-switch p-channel flash
Fig. 1. (Color online) (a) The three-dimensional sense-switch p-channel flash diagram. (b) The basic working schematic.
Fig. 2. (Color online) (a) The threshold voltage and drive current as a function of the program and erase cycles. (b) Electron trapping in the tunnel oxide or spacer at the drain side when programmed.
Fig. 3. (Color online) (a) Current–time curve during read stress at room temperature. (b)
Fig. 4. (Color online) (a) The output characteristics of the programmed switch. (b) The programmed and erased state of the switch under different temperatures. (c) The threshold voltage and drive current with different temperature cycling.
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Side Song, Guozhu Liu, Hailiang Zhang, Lichao Chao, Jinghe Wei, Wei Zhao, Genshen Hong, Qi He. Reliability evaluation on sense-switch p-channel flash[J]. Journal of Semiconductors, 2021, 42(8): 084101
Category: Articles
Received: Feb. 3, 2021
Accepted: --
Published Online: Aug. 6, 2021
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