Laser & Optoelectronics Progress, Volume. 62, Issue 17, 1739021(2025)

Black Phosphorus-Indium Arsenide Infrared Sensing-Computing Device and Its Neural Network Computing (Invited)

Xinyu Ma1,2, Hongyi Lin2, Yihong She2, Jinshui Miao2、**, and Xiaoyong Jiang2、*
Author Affiliations
  • 1School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 212013, Jiangsu , China
  • 2State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • show less
    Figures & Tables(14)
    Working principle of bipolar cells in the mammalian retina
    Schematic diagrams of bipolar cell-inspired MSM structure unit device and its array configuration
    Energy band distributions of the BP-InAs-BP structure in the Sentaurus TCAD physical simulation. (a) Dark state; (b) light state
    Schematic diagrams of different structures and corresponding leakage currents in dark state. (a) Structure of BP-InAs-BP; (b) leakage currents in dark state of different structures; (c) structure of heterojunction; (d) structure of pure BP; (e) structure of pure InAs
    Asymmetric distributions of cross-section in traditional BP-InAs heterojunction MSM phototransistors. (a) Space charge distributions under positive and negative biases at 832 nm wavelength; (b) corresponding band distribution
    Symmetrical distributions of the cross-section in BP-InAs-BP MSM phototransistors. (a) Space charge distributions under positive and negative biases at 832 nm wavelength; (b) corresponding band distribution
    Schematic diagrams of different structures and corresponding electron current density distributions under negative bias in the optical state. (a) Structure of BP-InAs-BP; (b) structure of heterojunction; (c) structure of pure BP; (d) structure of pure InAs
    Device prepared in the laboratory and its simulated fitting results. (a) Optical microscope image of the BP-InAs-BP MSM photodetector; (b) comparison of experimental data and model test data of the proposed device in the dark state and 832 nm infrared light
    Responsivities under various biases at 832 nm wavelength
    Current responses under different light intensities at 832 nm wavelength
    Distributions of absorption density and light-excited carriers at the InAs-BP heterojunction in proposed device at different light wavelengths. (a) 520 nm; (b) 832 nm; (c) 1310 nm
    Schematic diagram of the convolutional neural network implemented by proposed array for modified national institute of standards and technology database (MNIST) recognition
    Comparison of recognition rates between the fully connected in the proposed arrayed convolutional layer and traditional fully connected
    Confusion matrix of the recognition accuracy after introducnig the proposed arrayed convolutional layer
    Tools

    Get Citation

    Copy Citation Text

    Xinyu Ma, Hongyi Lin, Yihong She, Jinshui Miao, Xiaoyong Jiang. Black Phosphorus-Indium Arsenide Infrared Sensing-Computing Device and Its Neural Network Computing (Invited)[J]. Laser & Optoelectronics Progress, 2025, 62(17): 1739021

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: AI for Optics

    Received: Mar. 17, 2025

    Accepted: May. 5, 2025

    Published Online: Sep. 11, 2025

    The Author Email: Jinshui Miao (jsmiao@mail.sitp.ac.cn), Xiaoyong Jiang (jiangxiaoyong@mail.sitp.ac.cn)

    DOI:10.3788/LOP250835

    CSTR:32186.14.LOP250835

    Topics