[1] [1] E Rohde, I M Rheinbaben, A Oggan, et al.. Interstitial laser-induced thermotherapy (LITT): comparison of in-vitro irradiation effects of NdYAG (1064 nm) and diode (940 nm) laser［J］. Med Laser Appl, 2001, 16(2): 81-90.

[2] [2] Li Yanhua, Kang Zhilong, Hu Liming. New application of semiconductor laser in medical field［J］. Laser Journal, 2010, 31(6): 73-75.

[3] [3] F G Bachmann, U A Russek. Laser welding of polymers using high power diode lasers［C］. SPIE, 2002, 4637: 505-518.

[4] [4] V Rossin, E Zucker, M Peters . High-power high-efficiency 910～980 nm broad area laser diodes［C］. SPIE, 2004, 5336: 533627.

[5] [5] A Al-Muhanna, L J Mawst, D Botez. High-power (>10 W) continuous-wave operation from 100-μm-apertures 0.97-μm-emitting Al-free diodes lasers［J］. Appl Phys Lett, 1998, 73(9): 1182-1184.

[6] [6] M Nawaz, K Permthamassin, C Zaring, et al.. A theoretical optimization of GaInP/GaInAs/GaAs based 980 nm Al-free pump laser using self-consistent numerical simulation［J］. Solid-State Electronics, 2003, 47(2): 291-295.

[7] [7] I B Petrescu-Prahova, T Moritz, J Riordan. High brightness long 940-nm diode lasers with double waveguide structure［C］. SPIE, 2003, 4995: 176-183.

[8] [8] X Tian, H Chen, X Che, et al.. 976 nm high efficiency semiconductor laser material［J］. Micronanoelectronic Technology, 2010, 47(1): 29-32.

[9] [9] K Itaya, M Ishikawa, Y Watanabe, et al.. A new transverse-mode stabilized InGaAlP visible light laser diode using p-p isotype heterobarrier blocking［J］. Jpn J Appl Phys, 1988, 27(12): L2414-L2416.

[10] [10] B Schmidt, B Sverdlov, S Pawlik, et al.. 9xx high-power broad area laser diodes［C］. SPIE, 2005, 5711: 201-208.