[1] [1] Rehm R, Walther M, Schmitz J, et al. Dual-colour thermal imaging with InAs/GaSb superlattices in mid-wavelength infrared spectral range[J]. Electronics Letters, 2006, 42(10): 577-578.

[4] [4] Smith D L, Mailhiot C. Proposal for strained type II superlattice infrared detectors[J]. Journal of Applied Physics, 1987, 62(6): 2545.

[7] [7] Razeghi M, Haddadi A, Hoang A M, et al. Antimonide-based type II superlattices: a superior candidate for the third ceneration of infrared imaging systems[J]. Journal of Electronic Materials, 2014, 43(8): 2802-2807.

[8] [8] SUN Y, HAN X, HAO H, et al. 320×256 Short-/Mid-Wavelength dual-color infrared focal plane arrays based on Type-II InAs/GaSb superlattice[J]. Infrared Physics & Technology, 2017, 82: 140-143.

[9] [9] GUO C, JIANG Z, JIANG D, et al. Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices[J]. Optical and Quantum Electronics, 2019, 51(3): 73.

[10] [10] Haddadi A, Dehzangi A, Chevallier R, et al. Bias-selectable nBn dual-band long-/very long-wavelength infrared photodetectors based on InAs/InAs1.xSbx/AlAs1.xSbx type–II superlattices[J]. Scientific Reports, 2017, 7(1): 3379.

[14] [14] GUO C, JIANG Z, JIANG D, et al. Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices[J]. Optical and Quantum Electronics, 2019, 51(3): 73.

[15] [15] PENG R, JIAO S, JIANG D, et al. Dark current mechanisms and spectral response of SiO2-passivated photodiodes based on InAs/GaSb superlattice[J]. Thin Solid Films, 2017, 629: 55-59.

[16] [16] Tribolet P, Destefanis G, Ballet P, et al. Advanced HgCdTe technologies and dual-band developments[C]//Infrared Technology and Applications XXXIV. International Society for Optics and Photonics, 2008, 6940:69402P.

[17] [17] Eich D, Ames C, Breiter R, et al. MCT-based high performance bispectral detectors by AIM[J]. Journal of Electronic Materials, 2019, 48(10): 1-10.

[18] [18] Rogalski A. InAs/GaSb type-II superlattices versus HgCdTe ternary alloys: future prospect[C]//Electro-Optical and Infrared Systems: Technology and Applications XIV. International Society for Optics and Photonics, 2017, 10433: 104330U.

[19] [19] Hirsh I, Shkedy L, CHEN N, et al. Hybrid dual-color MWIR detector for airborne missile warning systems[C]//Proc. of SPIE, 2012, 8353: 83530H.

[20] [20] Greiner M., Davis M. Devitt J. et al. State of the art in large format IR FPA development at CMC electronics Cincinnati[C]//Proc. of SPIE, 2012, 5074: 60-71.

[21] [21] Hlund L, von Wtemberg R M, Gatty H, et al. Type-II InAs/GaSb superlattices for dual color infrared detection[C]//Quantum Sensing and Nano Electronics and Photonics XIV. International Society for Optics and Photonics, 2017, 10111: 1011116.

[22] [22] Rehm R, Walther M, Schmitz J, et al. Dual-colour thermal imaging with InAs/GaSb superlattices in mid-wavelength infrared spectral range[J].

[23] [23] Rehm R, Walther M, Rutz F, et al. Dual-color InAs/GaSb superlattice focal-plane array technology[J]. Journal of Electronic Materials, 2011, 40(8): 1738-1743.

[26] [26] HUANG J, MA W, ZHANG Y, et al. Two-colorni bin type II superlattice infrared photodetector with external quantum efficiency larger than 100%[J]. IEEE Electron Device Letters, 2017, 38(9): 1266-1269.