Researching | Downscaling challenges in IGZO transistors: A study on threshold voltage roll-up and roll-off effects

Journal of Semiconductors, Volume. 46, Issue 8, 082301(2025)

Downscaling challenges in IGZO transistors: A study on threshold voltage roll-up and roll-off effects

Jiye Li^1,2, Mengran Liu¹, Zhendong Jiang¹, Yuqing Zhang¹, Hua Xu³, Lei Wang³, Congwei Liao⁴, Shengdong Zhang^1,2、*, and Lei Lu^1、**

Author Affiliations

¹School of Electronic and Computer Engineering, Peking University, Shenzhen 518055, China

²School of Integrated Circuits, Peking University, Beijing 100871, China

³School of Materials Science and Engineering, South China University of Technology, Guangzhou 510275, China

⁴College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China

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Jiye Li, Mengran Liu, Zhendong Jiang, Yuqing Zhang, Hua Xu, Lei Wang, Congwei Liao, Shengdong Zhang, Lei Lu. Downscaling challenges in IGZO transistors: A study on threshold voltage roll-up and roll-off effects[J]. Journal of Semiconductors, 2025, 46(8): 082301

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Paper Information

Category: Research Articles

Received: Dec. 3, 2024

Accepted: --

Published Online: Aug. 27, 2025

The Author Email: Shengdong Zhang (SDZhang), Lei Lu (LLu)

DOI:10.1088/1674-4926/24120005

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