Chip Structure Optimization of 905 nm Multiple-Active-Region Semiconductor Lasers

Shiyu Ji; Cong Xiong; Qiong Qi; Jinyuan Chang; Wei Li; Suping Liu; Xiaoyu Ma

doi:10.3788/AOS230479

Acta Optica Sinica, Volume. 43, Issue 13, 1314001(2023)

Chip Structure Optimization of 905 nm Multiple-Active-Region Semiconductor Lasers

Shiyu Ji^1,2, Cong Xiong^1、*, Qiong Qi¹, Jinyuan Chang¹, Wei Li¹, Suping Liu¹, and Xiaoyu Ma¹

¹National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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Figures & Tables(7)

$Refractive index distribution and near-field intensity of triple-active-region laser$

Fig. 1. Refractive index distribution and near-field intensity of triple-active-region laser

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Fig. 2. Distribution of current density in epitaxial structure

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Fig. 3. Schematic of isolation channel

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Fig. 4. Morphology of channel by ICP etching

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Fig. 5. Comparison of P-I curve of each sample. (a) Effect of etching depth; (b) effect of channel spacing

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Fig. 6. Test results under 0.1% duty ratio. (a) P-I curve; (b) far-field patterns

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Table 1. Isolation channel parameters for five samples
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Table 1. Isolation channel parameters for five samples
Sample No. d /μm w /μm Cavity length /mm
1 2.5 125 2
2 4.0 125 2
3 7.0 125 2
4 7.0 125 1
5 7.0 180 1

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Shiyu Ji, Cong Xiong, Qiong Qi, Jinyuan Chang, Wei Li, Suping Liu, Xiaoyu Ma. Chip Structure Optimization of 905 nm Multiple-Active-Region Semiconductor Lasers[J]. Acta Optica Sinica, 2023, 43(13): 1314001

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