Journal of Synthetic Crystals, Volume. 52, Issue 9, 1609(2023)

Influence of TiN and Ti Insertion Layer on Ohmic Contact Performance Between ITO and GaN

MENG Wenli1,2、*, ZHANG Yumin2,3,4, SUN Yuanhang2, WANG Jianfeng2,3,4, and XU Ke1,2,3,4
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
  • show less
    Figures & Tables(0)
    Tools

    Get Citation

    Copy Citation Text

    MENG Wenli, ZHANG Yumin, SUN Yuanhang, WANG Jianfeng, XU Ke. Influence of TiN and Ti Insertion Layer on Ohmic Contact Performance Between ITO and GaN[J]. Journal of Synthetic Crystals, 2023, 52(9): 1609

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Mar. 7, 2023

    Accepted: --

    Published Online: Oct. 7, 2023

    The Author Email: MENG Wenli (mengwl@mail.ustc.edu.cn)

    DOI:

    CSTR:32186.14.

    Topics