Study On Optical Communications, Volume. 49, Issue 2, 69(2023)

The Optimal Design of New Electro-absorption Modulated Laser

Yuan-xin SUN1, Zhen-qiang YANG1, Hua-yu JIA1、*, Jie YU2, and Deng-ao LI3
Author Affiliations
  • 1College of Electrical and Power Engineering, Taiyuan University of Technology, Taiyuan 030000, China
  • 2Accelink Technologies Co., Ltd., Wuhan 430074, China
  • 3College of Information and Computer, Taiyuan University of Technology, Taiyuan 030000, China
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    Figures & Tables(26)
    Schematic of new type iron-doped buried SAG-DSAL-EML
    Schematic of the active region structure
    PI characteristics at different well numbers
    SMSR and average gain at different well numbers
    Characteristics of lasers at different quantum well thicknesses
    Laser wavelength
    Laser wavelength
    Laser partial waveguide structure of iron-doped buried EML
    The cross-sectional optical field distribution of the laser part of the EML
    Manufacturing process flow chart of SAG-DSAL-EML
    Mask growth pattern of SAG
    Microscopic image of iron-doped buried structure
    EML sample chip
    Comparison of PI characteristics between SAG-DSAL structure and traditional multiple quantum well structure
    Comparison chart of horizontal light field mode
    Laser far-field distribution
    17 S parameters of HFSS simulation modulator
    Equivalent circuit diagram of modulator
    19 S -parameter fitting image
    Fequency response of modulator under different junction capacitance
    Threshold value characteristics
    The laser spectrum of the part of laser at 70 mA injection current
    Measured static extinction ratio
    High frequency response curve
    • Table 1. Active region parameters of iron-doped buried SAG-DSAL-EML

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      Table 1. Active region parameters of iron-doped buried SAG-DSAL-EML

      有源区量子阱个数In1-mGamAsnP1-n厚度/nm掺杂浓度/cm-3
      上层 InGaAsP (势垒层)×5(0.181,0.395)10不掺杂
      有源区 InGaAsP (势阱层)×4(0.095,0.532)5不掺杂
      下层 InGaAsP (势垒层)×4(0.181,0.395)10不掺杂
      有源区 InGaAsP (势阱层)×4(0.265,0.581)5不掺杂
    • Table 2. Partial cross-sectional structural parameters of iron-doped buried SAG-DSAL-EML

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      Table 2. Partial cross-sectional structural parameters of iron-doped buried SAG-DSAL-EML

      层结构材料In1-mGamAsnP1-n厚度/nm掺杂浓度/cm-3
      欧姆接触层 P-InGaAs(0,0)2001×1019
      包层 P-InP(0,0)1 1001×1018
      阻挡层 N-InP(0,0)3301×1018
      间隔层 P-InP(0,0)5005×1017
      上限制层 P-InGaAsP(0.181,0.395)1005×1017
      有源区InGaAsP×5(势垒层)(0.265,0.581)15不掺杂
      InGaAsP×4(势阱层)(0.181,0.395)9不掺杂
      下限制层 N-InGaAsP(0.181,0.395)605×1017
      缓冲层 N-InP(0,0)1601×1018
      掺铁 InP 层 Fe-InP(0,0)6001×1018
      衬底 N-InP(0,0)10 0003×1018
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    Yuan-xin SUN, Zhen-qiang YANG, Hua-yu JIA, Jie YU, Deng-ao LI. The Optimal Design of New Electro-absorption Modulated Laser[J]. Study On Optical Communications, 2023, 49(2): 69

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    Paper Information

    Category: Research Articles

    Received: Jun. 23, 2022

    Accepted: --

    Published Online: Apr. 24, 2023

    The Author Email: Hua-yu JIA (jiahuayu@mail.xdtu.edu.cn)

    DOI:10.13756/j.gtxyj.2023.02.011

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