Nanohole array structured GaN-based white LEDs with improved modulation bandwidth via plasmon resonance and non-radiative energy transfer

Rongqiao Wan; Guoqiang Li; Xiang Gao; Zhiqiang Liu; Junhui Li; Xiaoyan Yi; Nan Chi; Liancheng Wang

doi:10.1364/PRJ.421366

Photonics Research, Volume. 9, Issue 7, 1213(2021)

Nanohole array structured GaN-based white LEDs with improved modulation bandwidth via plasmon resonance and non-radiative energy transfer

Rongqiao Wan¹, Guoqiang Li², Xiang Gao¹, Zhiqiang Liu^3,4, Junhui Li¹, Xiaoyan Yi^3,4,5、*, Nan Chi^2,6、*, and Liancheng Wang^1,7、*

Author Affiliations

¹State Key Laboratory of High Performance Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China

²Department of Communication Science and Engineering, Key Laboratory for Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai 200433, China

³Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

⁴College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China

⁵e-mail: spring@semi.ac.cn

⁶e-mail: nanchi@fudan.edu.cn

⁷e-mail: liancheng_wang@csu.edu.cn

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Figures & Tables(9)

Fig. 1. Fabrication process of H-LEDs.

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Fig. 2. (a) Top view SEM image of bare H-LED; (b) high magnification SEM image for the area marked by the red box in (a); (c) and (d) cross-sectional view of SEM image of bare nanoholes and nanoholes filled with QDs and Ag NPs, respectively.

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Fig. 3. (a) EL spectra of H-LED and absorption spectra of Ag NPs. (b) Decay curves of QWs of H-LED, QD-LED, and M-LED, respectively. (c) Possible energy transfer processes in the hybrid structure.

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Fig. 4. (a) I-V characteristics of H-LED and Ag-LED. (b) Optical response of QD-LED and M-LED at 60 mA.

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Fig. 5. (a) EL spectra of the QD-LED and M-LED under 20 mA; (b) optical power; (c) CRI; and (d) CIE-1931 chromaticity coordinates of QD-LED and M-LED versus current.

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Fig. 6. (a) Data rate and BER of BPSK signal at different currents. (b) BER versus data rate of BPSK signal at 60 mA; insets: constellation diagrams at points (a), (b), (c), and (d).

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Fig. 7. (a) Data rate versus bandwidth; QAM order and SNR versus DMT subcarrier index of the (b) QD-LED and (c) M-LED. (d) Constellation diagrams.

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Table 1. Carriers’ Lifetime of QWs of H-LED, QD-LED, and M-LED
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Table 1. Carriers’ Lifetime of QWs of H-LED, QD-LED, and M-LED
Sample $τ_{1}$ (ns) $τ_{2}$ (ns)
H-LED 1.25 80.5
QD-LED 1.07 79.6
M-LED 0.85 73.0

Table 2. Achievements Applying GaN-Based Single-Chip WLEDs

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Table 2. Achievements Applying GaN-Based Single-Chip WLEDs

LED Type	Current Density	Modulation Scheme	Data Rate	Refs.
μLED + polymer color converter	$3 kA / {cm}^{2}$	Orthogonal frequency division multiplexing (OFDM)	1.68 Gb/s	[8]
Phosphorescent white LED	—	OFDM (bit and power loading)	2.0 Gb/s	[15]
μLED + QDs	$1.1 kA / {cm}^{2}$	Non-return-to-zero on–off keying (NRZ-OOK)	300 Mb/s	[9]
Micro-LED + QDs	$10 kA / {cm}^{2}$	NRZ-OOK	675 Mb/s	[5]
No phosphor	$0.072 kA / {cm}^{2}$	NRZ-OOK	127 Mb/s	[4]
Nanohole-LED + QDs + Ag NPs	$0.096 kA / {cm}^{2}$	DMT	2.21 Gb/s	This work

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Rongqiao Wan, Guoqiang Li, Xiang Gao, Zhiqiang Liu, Junhui Li, Xiaoyan Yi, Nan Chi, Liancheng Wang, "Nanohole array structured GaN-based white LEDs with improved modulation bandwidth via plasmon resonance and non-radiative energy transfer," Photonics Res. 9, 1213 (2021)

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