Microelectronics, Volume. 51, Issue 1, 112(2021)

Study on Differential Negative Resistance of Submicron ESD-Implanted NMOS IDT-VGS Under High Electric Field

LIU Yukui1, YIN Wanjun1, TAN Kaizhou1,2, and CUI Wei1,2
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    LIU Yukui, YIN Wanjun, TAN Kaizhou, CUI Wei. Study on Differential Negative Resistance of Submicron ESD-Implanted NMOS IDT-VGS Under High Electric Field[J]. Microelectronics, 2021, 51(1): 112

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    Paper Information

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    Received: Jul. 14, 2020

    Accepted: --

    Published Online: Mar. 11, 2022

    The Author Email:

    DOI:10.13911/j.cnki.1004-3365.200322

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