Opto-Electronic Engineering, Volume. 51, Issue 12, 240249-1(2024)
Terahertz generation based on the ultrashort laser pulses pumped metal-insulator-semiconductor heterostructure
Fig. 1. Schematic of the terahertz generation from metal-insulator-semiconductor heterostructure pumped by the ultrashort laser pulses
Fig. 2. Trends of carrier density generated by the laser pulses with different pulse durations
Fig. 4. Terahertz pulses produced by laser pulse with different pulse durations. (a) Time-domain waveforms; (b) Corresponding spectra distribution
Fig. 5. Influence of the laser pulse duration on the (a) terahertz pulses central frequency and (b) bandwidth
Fig. 6. Influence of the carrier lifetime on (a) the terahertz pulse central frequency and (b)
Fig. 7. The influence of semiconductor thickness in heterojunction on (a) the terahertz pulse central frequency and (b) bandwidth
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Bin Huang, Xiang Liu, Jianxiong Yu, Haiwei Du. Terahertz generation based on the ultrashort laser pulses pumped metal-insulator-semiconductor heterostructure[J]. Opto-Electronic Engineering, 2024, 51(12): 240249-1
Category: Article
Received: Oct. 23, 2024
Accepted: Dec. 3, 2024
Published Online: Feb. 21, 2025
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