Opto-Electronic Engineering, Volume. 51, Issue 12, 240249-1(2024)

Terahertz generation based on the ultrashort laser pulses pumped metal-insulator-semiconductor heterostructure

Bin Huang1, Xiang Liu1, Jianxiong Yu1, and Haiwei Du1,2、*
Author Affiliations
  • 1School of Instrument Science and Optoelectronic Engineering, Nanchang Hangkong University, Nanchang, Jiangxi 330063, China
  • 2Key Laboratory of Nondestructive Testing (Ministry of Education), Nanchang Hangkong University, Nanchang, Jiangxi 330063, China
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    Figures & Tables(7)
    Schematic of the terahertz generation from metal-insulator-semiconductor heterostructure pumped by the ultrashort laser pulses
    Trends of carrier density generated by the laser pulses with different pulse durations
    Changing of the velocity of the carriers
    Terahertz pulses produced by laser pulse with different pulse durations. (a) Time-domain waveforms; (b) Corresponding spectra distribution
    Influence of the laser pulse duration on the (a) terahertz pulses central frequency and (b) bandwidth
    Influence of the carrier lifetime on (a) the terahertz pulse central frequency and (b)bandwidth
    The influence of semiconductor thickness in heterojunction on (a) the terahertz pulse central frequency and (b) bandwidth
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    Bin Huang, Xiang Liu, Jianxiong Yu, Haiwei Du. Terahertz generation based on the ultrashort laser pulses pumped metal-insulator-semiconductor heterostructure[J]. Opto-Electronic Engineering, 2024, 51(12): 240249-1

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    Paper Information

    Category: Article

    Received: Oct. 23, 2024

    Accepted: Dec. 3, 2024

    Published Online: Feb. 21, 2025

    The Author Email:

    DOI:10.12086/oee.2024.240249

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