Tensile-strained Ge/SiGe multiple quantum well microdisks

Xiaochi Chen; Colleen S. Fenrich; Muyu Xue; Ming-Yen Kao; Kai Zang; Ching-Ying Lu; Edward T. Fei; Yusi Chen; Yijie Huo; Theodore I. Kamins; James S. Harris

doi:10.1364/PRJ.5.0000B7

Photonics Research, Volume. 5, Issue 6, B7(2017)

Tensile-strained Ge/SiGe multiple quantum well microdisks

Xiaochi Chen^1、*, Colleen S. Fenrich², Muyu Xue², Ming-Yen Kao³, Kai Zang¹, Ching-Ying Lu¹, Edward T. Fei¹, Yusi Chen¹, Yijie Huo¹, Theodore I. Kamins¹, and James S. Harris¹

Author Affiliations

¹Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

²Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA

³Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan

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Xiaochi Chen, Colleen S. Fenrich, Muyu Xue, Ming-Yen Kao, Kai Zang, Ching-Ying Lu, Edward T. Fei, Yusi Chen, Yijie Huo, Theodore I. Kamins, James S. Harris, "Tensile-strained Ge/SiGe multiple quantum well microdisks," Photonics Res. 5, B7 (2017)

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Paper Information

Category: OPTICAL MICROCAVITIES

Received: Jun. 2, 2017

Accepted: Aug. 4, 2017

Published Online: Jan. 10, 2019

The Author Email: Xiaochi Chen (chenxiaochihust@gmail.com)

DOI:10.1364/PRJ.5.0000B7

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology