INFRARED, Volume. 44, Issue 2, 13(2023)

Study on Ion Implantation Temperature of Mercury Cadmium Telluride

Bin HE*... Huan ZHANG, Gang HAN, Xu-sheng WANG and Chen LIU |Show fewer author(s)
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    References(4)

    [11] [11] Talipov N K, Ovsyuk V N, Remesnik V G. Electrical Activation of Boron Implanted in p-HgCdTe (x=0.22) by Low-temperature Annealing Under an Anodic Oxide [J]. Materials Science & Engineering B: Solid-State Materials for Advanced Technology, 1997, 44(1-3): 266.

    [12] [12] Gopal V, Gupta S, Bhan R K, et al. Modeling of Dark Characteristics of Mercury Cadmium Telluride n+-p Junctions [J]. Infrared Phys Technol, 2003, 44(2): 143-152.

    [15] [15] Fiorito G, Gasparrini G, Svelto F. Properties of Hg Implanted Hg1-xCdxTe Infrared Detectors [J]. Applied Physics, 1978, 17(1): 105-110.

    [16] [16] Hua H, Xie X, Hu X. Analysis of Dark Current in Long-wavelength HgCdTe Junction Diodes at Low Temperature and an Approximate Method to Calculate the Trap Density of Depletion Region [C]. SPIE, 2012, 8419: 8419A.

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    HE Bin, ZHANG Huan, HAN Gang, WANG Xu-sheng, LIU Chen. Study on Ion Implantation Temperature of Mercury Cadmium Telluride[J]. INFRARED, 2023, 44(2): 13

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    Paper Information

    Received: Sep. 25, 2022

    Accepted: --

    Published Online: Mar. 17, 2023

    The Author Email: HE Bin (1051464875@qq.com)

    DOI:10.3969/j.issn.1672-8785.2023.02.003

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