Chinese Journal of Lasers, Volume. 49, Issue 12, 1206001(2022)

Research Progress on High-Linearity Electro-Optical Modulators

Zixi Liu, Cheng Zeng**, and Jinsong Xia*
Author Affiliations
  • Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, Hubei, China
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    Figures & Tables(31)
    Structure of Mach-Zehnder interferometer (MZI)
    Relationship between input and output powers of each signal component in MWP link[13]
    Dual-tone test output RF spectrum of MWP link[13]
    Electrical predistortion method[14]
    Structure of polarization linear modulator[18]
    Structure diagram of double polarizer MZM[19]
    Dual polarization parallel MZM modulator[21]. (a) Model schematic; (b) RF output power as a function of RF input power for dual-polarization modulator and traditional ODSB schemes
    Dual parallel MZI modulator based on polarization multiplexing[22]. (a) Model schematic; (b) SFDR performance of multi-octave linearized link based on PM-DPMZM
    Enhanced linearized analog photonic link[23]. (a) Schematic of enhanced linearity link and working points of sub-MZMs; (b) comparison of frequency spectra for two-tone test, where the left is traditional quadrature-biased link and the right is enhanced linearity link; (c) SFDR curves, where the left is traditional quadrature-biased link and the right is enhanced linearity link
    Schematics of double parallel and multistage parallel modulators. (a) Double parallel modulator[24]; (b) multistage parallel modulator[25]
    Schematic of proposed linearity analog photonic link based on DPMZM[29]
    Structure diagram and microscopy image of double-parallel silicon MZM[30]
    Schematic of single integrated multiplex MZI modulator[31]
    Dual parallel MZM modulator based on phase shift[32]
    Schematic of series linearized modulator[33]
    Schematic and microscopy image of silicon double series MZM[34]. (a) Schematic; (b) microscopy image
    Structure diagram of micro-ring resonator
    Structure diagram of RAMZM
    Schematic of a RAMZM with push-pull operation[36]
    Two different configurations of IMPACC[37]
    CMOS compatible silicon microring-assisted MZM[38]. (a) Schematic of fabricated ring-assisted MZI modulator;(b) cross-section of waveguide; (c) top-view of fabricated modulator
    Optimized double microring assisted modulator[39]. (a) Microscopic image; (b) measured SFDR curves at 1 GHz and 10 GHz
    Process flow of heterogeneous-integrated MZM on silicon[40]. (a) Si-WG etch; (b) materials bonding; (c) Ⅲ-Ⅴ etch and N-contact; (d) metallization
    Structure and technological process of heterogeneous RAMAM on silicon[41]
    Reconfigurable silicon RAMZM[12]. (a) Model schematic; (b) modulator chip packaged with a PCB
    Compact thin-film lithium niobate electro-optic modulator on silicon[47]. (a) 1550 nm TE field; (b) 10 GHz RF field
    Si/LiNbO3 hybrid ring modulator[48]. (a) Structure diagram; (b) cross-section of device; (c) top-view optical micrograph of fabricated device; (d) SEM image of electrodes
    Structure schematic of Si/LiNbO3 hybrid MZM[49]
    • Table 1. Frequency and corresponding amplitude of dual-tone signal

      View table

      Table 1. Frequency and corresponding amplitude of dual-tone signal

      FrequencyAmplitude
      ω12I0J0m1J1m2
      ω22I0J0m2J1m1
      2ω1ω22I0J1m1J2m2
      2ω2ω12I0J1m2J2m1
      3ω12I0J0m2J3m1
      3ω22I0J0m1J3m2
    • Table 2. Common methods for linearization of electrooptical modulator

      View table

      Table 2. Common methods for linearization of electrooptical modulator

      Processing domainLinearization methodBasic principleAdvantageShortage
      Electrical domainElectronic predistortionIntroducing arcsine predistortion signal to RF signal

      1) Simple operation

      2) Widely applicable

      1) High-speed electronic devices are required to accurately control distortion signals
      Post compensationA specific digital sampling method is used to cancel the distortion at the outputOnly consider electronics problems2) Vulnerable to temperature drift and other unstable factors
      Optical domainDual polarization controlControl the third-order distortion power of TE and TM light at same strength but opposite direction to cancel each otherFundamentally solve the nonlinear problem of light in modulator

      1) It needs to precisely control the distribution of different polarization powers

      2) Structure and control are complex

      MZM series/parallelUsing one MZM to compensate the other one

      1) Wide optical band-width

      2) High manufacturing and temperature tolerance

      1) High optical loss

      2) Structure is relatively complex

      3) Additional compensation

      Microring-assisted MZM (RAMZM)The superlinear phase modulation of the microring and the nonlinear cosine function caused by MZM can cancel each other

      1) Simple structure design

      2) High linearity can be achieved

      1) Low manufacturing tolerance

      2) Linearity is affected by the loss of microring

    • Table 3. Performance parameters of different modulator structures

      View table

      Table 3. Performance parameters of different modulator structures

      ReferenceStructureInsertion loss /dBIMD3 decrement /dBFloor noise /(dBm·Hz-1)SFDRIMD3/dB·Hz2/3
      [11]Silicon microring6-16884@1 GHz
      [50]Silicon MZM6.7-16596.3@1 GHz
      [23]PM-DPMZM25.1-163.1112.3@19 GHz
      [31]PM-DPMZM (control RF)6

      33.7@15 GHz

      30.5@20 GHz

      -162

      110.8@15 GHz

      109.5@20 GHz

      [32]DPMZM (control bias)45-170116.8@12 GHz(simulation)
      [34]MZM series8

      -156@1 GHz

      -152@10 GHz

      109.5@1 GHz

      100.5@10 GHz

      [39]Double-ring RAMZM29-160

      106@1 GHz

      99@10 GHz

      [12]Tunable RAMZM540-163111.3@1 GHz
      [41]Heterogeneous RAMZI5-60117.5@1 GHz
      [47]LNOI MZM-150

      97.3@1 GHz

      92.6@10 GHz

      [49]Si/LiNbO3 hybrid MZM2.5-160

      99.6@1 GHz

      95.2@10 GHz

      [51]LNOI RAMZM10.5

      -163.8@1 GHz

      -162.6@5 GHz

      120.04@1 GHz

      114.54@5 GHz

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    Zixi Liu, Cheng Zeng, Jinsong Xia. Research Progress on High-Linearity Electro-Optical Modulators[J]. Chinese Journal of Lasers, 2022, 49(12): 1206001

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    Paper Information

    Category: fiber optics and optical communications

    Received: Mar. 3, 2022

    Accepted: Apr. 18, 2022

    Published Online: Jun. 13, 2022

    The Author Email: Cheng Zeng (zengchengwuli@hust.edu.cn), Jinsong Xia (jsxia@hust.edu.cn)

    DOI:10.3788/CJL202249.1206001

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