A new PMOS device trigger SCR device (PMTSCR) was proposed to reduce the trigger voltage for electrostatic discharge (ESD) protection. The turn-on of the PMTSCR device was determined by the channel length of the parasitic PMOS and the parasitic well resistances RPW and RNW of the SCR device. The device featured low trigger voltage. The experimental results showed that the trigger voltage of the PMTSCR device reduced from 63 V to 44 V, and was 30% less than that of the traditional low voltage trigger SCR device (LVTSCR), while the ESD leakage current of the device remained unchanged.